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Mechanical Characterization of Released Thin Films by Contact Loading

机译:通过接触载荷对释放的薄膜进行机械表征

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摘要

The design of reliable micro electro-mechanical systems (MEMS) requires understanding of material properties of devices, especially for free-standing thin structures such as membranes, bridges, and cantilevers. The desired characterization system for obtaining mechanical properties of active materials often requires load control. However, there is no such device among the currently available tools for mechanical characterization of thin films. In this paper, a new technique, which is load-controlled and especially suitable for testing highly fragile free-standing structures, is presented. The instrument developed for this purpose has the capability of measuring both the static and dynamic mechanical response and can be used for electro/magneto/thermo mechanical characterization of actuators or active materials. The capabilities of the technique are demonstrated by studying the behavior of 75 nm thick amorphous silicon nitride (Si_3N_4) membranes. Loading up to very large deflections shows excellent repeatability and complete elastic behavior without significant cracking or mechanical damage. These results indicate the stability of the developed instrument and its ability to avoid local or temporal stress concentration during the entire experimental process. Finite element simulations are used to extract the material properties such as Young's modulus and residual stress of the membranes. These values for Si_3N_4 are in close agreement with values obtained using a different technique, as well as those found in the literature. Potential applications of this technique in studying functional thin film materials, such as shape memory alloys, are also discussed.
机译:可靠的微机电系统(MEMS)的设计要求了解设备的材料特性,尤其是对于独立的薄结构(例如膜,桥和悬臂)而言。用于获得活性材料的机械性能的所需表征系统通常需要负载控制。但是,在当前可用的薄膜机械表征工具中没有这种装置。本文提出了一种新技术,该技术受负载控制,特别适合于测试高度脆弱的独立式结构。为此目的而开发的仪器具有测量静态和动态机械响应的能力,可用于执行器或活性材料的电/磁/热机械特性表征。通过研究75 nm厚的非晶氮化硅(Si_3N_4)膜的行为,证明了该技术的功能。承受非常大的挠度时,显示出出色的可重复性和完整的弹性性能,而没有明显的开裂或机械损伤。这些结果表明了所开发仪器的稳定性及其在整个实验过程中避免局部或时间应力集中的能力。有限元模拟用于提取材料特性,例如杨氏模量和膜的残余应力。 Si_3N_4的这些值与使用其他技术获得的值以及文献中发现的值非常一致。还讨论了该技术在研究功能薄膜材料(例如形状记忆合金)中的潜在应用。

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