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Compact silicon photonic waveguide modulator based on the vanadium dioxide metal-insulator phase transition

机译:基于二氧化钒金属-绝缘体相变的紧凑型硅光子波导调制器

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摘要

We have integrated lithographically patterned VO2 thin films grown by pulsed laser deposition with silicon-on-insulator photonic waveguides to demonstrate a compact in-line absorption modulator for use in photonic circuits. Using single-mode waveguides at λ = 1550 nm, we show optical modulation of the guided transverse-electric mode of more than 6.5 dB with 2 dB insertion loss over a 2-µm active device length. Loss is determined for devices fabricated on waveguide ring resonators by measuring the resonator spectral response, and a sharp decrease in resonator quality factor is observed above 70 °C, consistent with switching of VO_2 to its metallic phase. A computational study of device geometry is also presented, and we show that it is possible to more than double the modulation depth with modified device structures.
机译:我们将通过脉冲激光沉积与绝缘体上硅光子波导生长的光刻图案化的VO2薄膜集成在一起,以展示用于光子电路的紧凑型在线吸收式调制器。使用λ= 1550 nm的单模波导,我们显示了在2 µm有源器件长度上超过6.5 dB的引导横向电模的光调制和2 dB的插入损耗。通过测量谐振器的频谱响应来确定在波导环形谐振器上制造的器件的损耗,并且在高于70°C的温度下观察到谐振器品质因数的急剧下降,这与VO_2切换为其金属相一致。还介绍了对设备几何形状的计算研究,并且我们证明,使用修改后的设备结构可以使调制深度增加一倍以上。

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