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Low-Power CMOS Integrated Hall Switch Sensor

机译:低功耗CMOS集成霍尔开关传感器

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摘要

This paper presents an integrated Hall switch sensor based on SMIC 0.18 µm CMOS technology. The system includes a front-end Hall element and a back-end signal processing circuit. By optimizing the structure of the Hall element and using the orthogonal coupling and spinning current technology, the offset voltage can be suppressed effectively. The simulation results showed that the Hall switch can eliminate offset voltage greater than 1 mV at 3.3 V supply voltage. Two modes of the Hall switch circuit, the awake mode and the sleep mode, were realized by using clock logic signals without compromising the performance of the Hall switch, thereby reducing power consumption. The test results showed that the operate point and the release point of the switch were within the range of 3–7 mT at 3.3 V supply voltage. Meanwhile, the current consumption is 7.89 µA.
机译:本文介绍了基于SMIC0.18μmCMOS技术的集成霍尔开关传感器。该系统包括前端霍尔元件和后端信号处理电路。通过优化霍尔元件的结构并使用正交耦合和纺丝电流技术,可以有效地抑制偏移电压。仿真结果表明,霍尔开关可以在3.3V电源电压下消除大于1 mV的偏移电压。通过使用时钟逻辑信号来实现霍尔开关电路,唤醒模式和睡眠模式的两种模式,而不会影响霍尔开关的性能,从而降低功耗。测试结果表明,开关的操作点和释放点在3-7毫秒的3.3V电源电压范围内。同时,目前的消耗量为7.89μA。

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