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GaAs-GaAlAs distributed-feedback diode lasers with separate optical and carrier confinement

机译：具有单独的光学和载流子限制的GaAs-GaAlAs分布式反馈二极管激光器

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摘要

Remarkable reduction of the threshold current density is achieved in GaAs-GaAlAs distributed-feedback diode lasers by adopting a separate-confinement heterostructure. The diodes are lased successfully at temperatures up to 340 °K under pulsed operation. The lowest threshold current density is 3 kA/cm^2 at 300 °K.

机译：通过采用单独的限制异质结构，GaAs-GaAlAs分布式反馈二极管激光器的阈值电流密度显着降低。在脉冲操作下，二极管可在高达340°K的温度下成功发射激光。最低阈值电流密度在300°K时为3 kA / cm ^ 2。

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Aiki K.; Nakamura M.; Umeda J.; Yariv A.; Katzir A.; Yen H. W.;
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年度 1975
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1. An Equivalent Circuit Model for Analyzing Separate Confinement Heterostructure Quantum Well Laser Diodes Including Chirp and Carrier Transport Effects [J] . ABBAS ZARIFKAR, LIDA ANSARI, MOHAMMAD K. MORAVVEJ-FARSHI Fiber and Integrated Optics . 2009,第4期

机译：等效线性模型用于分析包括Chi和载流子传输效应的单独禁闭异质结构量子阱激光二极管
2. Effects of an undoped-InGaN waveguide on the optical confinement and carrier dynamics of InGaN laser diodes [J] . Paliwal Avinash, Singh Kuldip, Mathew Manish Laser Physics: An International Journal devoted to Theoretical and Experimental Laser Research and Application . 2018,第12期

机译：未掺杂的ingaN波导对InGaN激光二极管光学监管和载波动力学的影响
3. Erratum: 'Heating-induced carrier accumulation in the optical confinement layer and the output power in broadened symmetric and narrow asymmetric Waveguide laser diodes' [J. Appl. Phys. 101,123115 (2007)] [J] . Boris Ryvkin, Eugene Avrutin Journal of Applied Physics . 2007,第7期

机译：勘误表：“加热引起的载流子在光限制层中的积累以及加宽的对称和窄非对称波导激光二极管的输出功率” [J.应用物理101,123115（2007）]
4. Carrier accumulation in the optical confinement layer, its effect on power limit in high power and brightness laser diodes, and laser design to overcome this limitation [C] . Avrutin Eugene, Ryvkin Boris IEEE Photonics Society Summer Topical Meeting Series . 2012

机译：载流子在光限制层中的积累，它对高功率和亮度激光二极管中功率限制的影响以及克服该限制的激光设计
5. Characterization of strained quantum well tunneling injection and separate confinement heterostructure lasers. [D] . Yoon, Howard. 1996

机译：应变量子阱隧穿注入和分离禁区异质结构激光器的表征。
6. Unveiling laser diode fossil and the dynamic analysis for heliotropic growth of catastrophic optical damage in high power laser diodes [O] . Qiang Zhang, Yihan Xiong, Haiyan An, -1

机译：揭露激光二极管化石以及大功率激光二极管中灾难性光学损伤向热生长的动力学分析
7. cw operation of distributed-feedback GaAs-GaAlAs diode lasers at temperatures up to 300 K [O] . Nakamura M., Aiki K., Umeda J., 1975

机译：连续反馈GaAs-GaAlAs二极管激光器的连续工作温度高达300 K
8. First Results on InGaAsP Separate Confinement Heterostructure Diode Lasers. [R] . Razeghi, M. 1993

机译：InGaasp分离限制异质结构二极管激光器的第一个结果。

GaAs-GaAlAs distributed-feedback diode lasers with separate optical and carrier confinement

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