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Schottky-based band lineups for refractory semiconductors

机译:基于肖特基的耐火半导体带材阵容

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摘要

An overview is presented of band alignments for small-lattice parameter, refractory semiconductors. The band alignments are estimated empirically through the use of available Schottky barrier height data, and are compared to theoretically predicted values. Results for tetrahedrally bonded semiconductors with lattice constant values in the range from C through ZnSe are presented. Based on the estimated band alignments and the recently demonstrated p-type dopability of GaN, we propose three novel heterojunction schemes which seek to address inherent difficulties in doping or electrical contact to wide-gap semiconductors such as ZnO, ZnSe, and ZnS.
机译:概述了小晶格参数耐火半导体的能带对准。通过使用可用的肖特基势垒高度数据,凭经验估算能带对准,并将其与理论上的预测值进行比较。给出了晶格常数在C到ZnSe范围内的四面键合半导体的结果。基于估计的能带排列和最近证明的GaN的p型掺杂性,我们提出了三种新颖的异质结方案,旨在解决在掺杂或电接触宽禁带半导体(如ZnO,ZnSe和ZnS)方面的固有困难。

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