1.57 μm InGaAsP/InP surface emitting lasers by angled focus ion beam etching

摘要

The characteristics of 1.57 μm InGaAsP/InP surface emitting lasers based on an in-plan ridged structure and 45° beam deflectors defined by angled focused ion beam (FIB) etching are reported. With an externally integrated beam deflector, threshold currents and emission spectra identical to conventional edge emitting lasers are achieved. These results show that FIB etching is a very promising technique for the definition of high quality mirrors and beam deflectors on semiconductor heterostructures for a variety of integrated optoelectronic devices.