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GaN Surface Quantum Well In AlGaN∕GaN Transistor Heterostructure Studied By Contactless Electroreflectance

机译：GaN表面量子阱在AlGaN / GaN晶体管异质结构通过非接触式电流研究

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R. Kudrawiec; M. Gladysiewicz; J. Misiewicz; R. Paszkiewicz; B. Pszkiewicz; M. Tłaczała; Marília Caldas; Nelson Studart;
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2. Contactless Electroreflectance Study Of Band Bending For Undoped, Si- And Mg-doped Gan Layers And Algan/gan Transistor Heterostructures [J] . R. Kudrawiec, M. Motyka, J. Misiewicz, Microelectronics journal . 2009,第2期

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4. GaN Surface Quantum Well In A1GaN/GaN TransistorHeterostructure Studied By Contactless Electroreflectance [C] . R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, International Conference on the Physics of Semiconductors . 2009

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7. Investigations of GaN surface quantum well in AlGaN/GaN transistor heterostructures by contactless electroreflectance spectroscopy [O] . Motyka M., Syperek M., Kudrawiec R., 2006

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GaN Surface Quantum Well In AlGaN∕GaN Transistor Heterostructure Studied By Contactless Electroreflectance

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