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Temperature dependence of inverted tunneling magnetoresistance in MgO-based magnetic tunnel junctions

机译：倒置隧道磁阻在MgO的磁隧道结中的温度依赖性

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J.F. Feng; Gen Feng; Q.L. Ma; X.F. Han; J.M.D. Coey;
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年度 2010
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1. Temperature dependence of inverted tunneling magnetoresistance in MgO-based magnetic tunnel junctions [J] . J.F. Feng, Gen Feng, Q.L. Ma, Journal of magnetism and magnetic materials . 2010,第9a12期

机译：基于MgO的磁性隧道结中反向隧穿磁阻的温度依赖性
2. Bias voltage dependence of inverted magnetoresistance on the annealing temperature in MgO-based magnetic tunnel junctions [J] . J.F. Feng, Gen Feng, Q.L. Ma, Journal of magnetism and magnetic materials . 2009,第19期

机译：MgO基磁性隧道结中反向磁阻对退火温度的偏置电压依赖性
3. High inverted tunneling magnetoresistance in MgO-based magnetic tunnel junctions [J] . J. F. Feng, Gen Feng, J. M. D. Coey, Applied Physics Letters . 2007,第10期

机译：基于MgO的磁性隧道结中的高反向隧穿磁阻
4. Temperature dependence of inverted tunneling magnetoresistance in MgO-based magnetic tunnel junctions [C] . J.F. Feng, Gen Feng, Q.L. Ma Joint European Magnetic Symposia . 2010

机译：倒置隧道磁阻在MgO的磁隧道结中的温度依赖性
5. Engineering and characterizing inverse tunneling magnetoresistance magnetic tunnel junctions with novel ferromagnetic electrodes. [D] . Xiang, Hua. 2011

机译：用新型铁磁电极设计和表征逆隧穿磁阻磁隧道结。
6. Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure [O] . Du-Yeong Lee, Seung-Eun Lee, Tae-Hun Shim, 2016

机译：Co2Fe6B2上下自由层结构之间基于MgO的垂直-电磁-隧道-结自旋阀的隧道-磁阻比比较
7. Bias voltage dependence of inverted magnetoresistance on the annealing temperature in MgO-based magnetic tunnel junctions [O] . J.F. Feng, Gen Feng, Q.L. Ma, 2009

机译：反相磁阻对MgO的磁隧道结时的偏转电压依赖性

Temperature dependence of inverted tunneling magnetoresistance in MgO-based magnetic tunnel junctions

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