GaAs GaAlAs double-heterostructure injection lasers with distributed feedback

摘要

GaAs-GaAlAs double-heterostructure distributed-feedback injection lasers are investigated at temperatures between 80 and 150 K under pulsed operation. The optical feedback for laser oscillation is provided by a corrugated interface between the p-GaAs active layer and the p-GaAlAs layer. The corrugation is made by two methods, ion milling and chemical etching, and the latter method is found to give the lower threshold. The laser oscillation occurs in a single longitudinal mode, whose wavelength is stable against the change of the excitation level. The temperature dependence of the wavelength of the distributed-feedback laser is shown to be 0.5 Å/deg, which is about 1/3 to 1/4 that of the conventional Fabry-Perot (FP) laser.