Formation of Injecting and Blocking Contacts on High-Resistivity Germanium

摘要

The behavior of Al and Sb/Ge/Sb layers evaporated on high-purity Ge and heat treated at 280 °C is studied by reverse-recovery, double-injection, and nuclear-particle-response techniques. The results indicate that the contacts have the injection and blocking characteristics of p- and n-type material, respectively. Backscattering measurements with 1.8-MeV 4He+ ions show that solid-solid reactions occur.