Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes

摘要

We present preliminary results on minority carrier traps in as-grown n-type 4H−SiC Schottky barrier diodes. The minority carrier traps are crucial for charge trapping and recombination processes. In this study, minority carrier traps were investigated by means of minority carrier transient spectroscopy (MCTS) and high-resolution Laplace-MCTS measurements. A single minority carrier trap with its energy level position at Ev + 0.28 eV was detected and assigned to boron-related defects.