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(Invited) Metal Gate/High-κ Dielectric Gate Stack Reliability; or How I Learned to Live with Trappy Oxides

机译：（邀请的）金属栅/高κ介质栅极堆叠可靠性;或者我如何学会与氧化物一起生活

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1. Analytical Threshold Model for Nanoscale Cylindrical Surrounding-Gate Metal-Oxide-Semiconductor Field Effect Transistor with High-κ Gate Dielectric and Tri-Material Gate Stack [J] . Cong Li, i-Qi Zhuang, Ru Han Japanese journal of applied physics.Part 1.Regular papers & short notes . 2010,第12期

机译：具有高κ栅介电和三材料栅堆叠的纳米级圆柱栅金属氧化物半导体场效应晶体管的阈值分析模型
2. Improved Hot Carrier Reliability Characteristics of Metal Oxide Semiconductor Field Effect Transistors with High-κ Gate Dielectric by Using High Pressure Deuterium Post Metallization Annealing [J] . Hokyung Park, Rino Choi, Byoung Hun Lee, Japanese Journal of Applied Physics. Part 2, Letters & Express Letters . 2007,第a33a35aPt2期

机译：通过高压氘后金属化退火改善具有高κ栅介电层的金属氧化物半导体场效应晶体管的热载流子可靠性特性
3. Investigation of Gate Etch Damage at Metal/High- Gate Dielectric Stack Through Random Telegraph Noise in Gate Edge Direct Tunneling Current [J] . Cho H.-J., Son Y., Oh B., Electron Device Letters, IEEE . 2011,第4期

机译：通过栅极边缘直接隧穿电流中的随机电报噪声研究金属/高栅极电介质堆叠中的栅极蚀刻损伤
4. Metal Gate/High-κ Dielectric Gate Stack Reliability; Or How I Learned to Live with Trappy Oxides [C] . Barry P. Linder, E. Cartier, S. Krishnan International Symposium on Silicon Compatible Materials, Processes and Technologies for Advanced Integrated Circuits and Emerging Applications . 2013

机译：金属栅极/高κ电介质栅极堆叠可靠性;或者我如何学会与氧化物一起生活
5. Gate dielectric investigations of ultra-thin oxide and nitride /oxide stack for nanometer N- and P -channel metal-oxide-semiconductor field-effect-transistors [D] . Yee, Kam Fu 2000

机译：纳米N沟道和P沟道金属氧化物半导体场效应晶体管的超薄氧化物和氮化物/氧化物堆叠的栅极电介质研究
6. High-κ oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors [O] . Lei Liao, Jingwei Bai, Yongquan Qu, 2010

机译：高κ氧化物纳米带作为高迁移率顶栅石墨烯晶体管的栅极电介质
7. Wide-bandgap high- k Y2 O3 as passivating interlayer for enhancing the electrical properties and high-field reliability of n-Ge metal-oxide-semiconductor capacitors with high- k HfTiO gate dielectric [O] . Li CX, Lai PT 2009

机译：宽带隙高k Y2 O3作为钝化中间层，用于增强具有高k HfTiO栅极电介质的n-Ge金属氧化物半导体电容器的电性能和高场可靠性

(Invited) Metal Gate/High-κ Dielectric Gate Stack Reliability; or How I Learned to Live with Trappy Oxides

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