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Measurement of the fundamental modulation response of a semiconductor laser to millimeter wave frequencies by active-layer photomixing

机译:通过有源层光混合测量半导体激光器对毫米波频率的基本调制响应

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摘要

The room-temperature modulation response of a GaAs/GaAlAs semiconductor laser (relaxation resonance frequency, vR=6.5 GHz) is measured to 37 GHz using the active-layer photomixing technique. The measured response function agrees with the theoretical ideal, and there is no indication of device parasitic effects. An ultrahigh-finesse Fabry–Perot interferometer is used to detect the optical modulation, which appears as sidebands in the laser field spectrum. With a moderately faster laser diode (i.e., vR~10 GHz), the modulation response should be measurable beyond 100 GHz.
机译:使用有源层光混合技术将GaAs / GaAlAs半导体激光器的室温调制响应(松弛共振频率,vR = 6.5 GHz)测量为37 GHz。测得的响应函数与理论理想相符,并且没有器件寄生效应的迹象。超高精细法布里-珀罗干涉仪用于检测光调制,该光调制在激光场光谱中显示为边带。使用速度稍快的激光二极管(即vR〜10 GHz),应该可以测量超过100 GHz的调制响应。

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  • 作者单位
  • 年度 1989
  • 总页数
  • 原文格式 PDF
  • 正文语种 {"code":"en","name":"English","id":9}
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