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Observation of large peak-to-valley current ratios and large peak current densities in AlSb/InAs/AlSb double-barrier tunnel structures

机译:在AlSb / InAs / AlSb双势垒隧道结构中观察到大的峰谷电流比和大的峰电流密度

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摘要

We report improved peak-to-valley current ratios and peak current densities in InAs/AlSb double-barrier, negative differential resistance tunnel structures. Our peak-to-valley current ratios are 2.9 at room temperature and 10 at liquid-nitrogen temperatures. Furthermore, we have observed peak current densities of 1.7×10^5 A/cm^2. These figures of merit are substantially better than previously reported values. The improvements are obtained by adding spacer layers near the barriers, thinner well regions, and thinner barriers.
机译:我们报告了InAs / AlSb双势垒,负差分电阻隧道结构中改善的峰谷电流比和峰电流密度。我们的峰谷电流比在室温下为2.9,在液氮温度下为10。此外,我们观察到的峰值电流密度为1.7×10 ^ 5 A / cm ^ 2。这些品质因数比以前报告的值好得多。通过在势垒附近,较薄的阱区和较薄的势垒附近添加隔离层,可以获得改进。

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