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Characterization of transparent conducting carbon nanotube thin films prepared via different methods

机译:通过不同方法制备的透明导电碳纳米管薄膜的表征

摘要

The fabrication and characterization of transparent conductors based on single walled carbon nanotube (SWCNT) thin films were carried out in controlled environment and its performance compared. Here, we demonstrate the fabrication of thin, transparent, optically homogeneous, electrically conducting films of metallic enriched single-walled carbon nanotubes via three different deposition techniques namely dip coating, vacuum filtration and Langmuir Blodgett. Optical characterization showed that the maximum transmittance, TM, in Vis region is ~ 96.3% and minimum surface roughness, Ra ~ 4.87 nm achieved via Langmuir-Blodgett technique. I-V characteristics shows minimum sheet resistance, Rs ~ 3.62 × 103 Ω/sq and maximum conductivity, σ ~ 27.65 Ω-1cm-1 for vacuum filtration technique. It is shown that SWCNT deposition technique significantly affects the optical and electrical characteristics of resulting thin films. Langmuir Blodgett method produced film with the lowest surface roughness of Ra ~ 4.87 nm and uniform conductivity of σ ~ 0.025 Ω-1cm-1, whereas vacuum filtration method produced film with the highest surface roughness of Ra ~ 12.83 nm and non-uniform conductivity, σ, ranging from ~ 0.199 to ~0.017 Ω-1cm-1 depending on the film dimensions.
机译:在控制环境下进行了基于单壁碳纳米管(SWCNT)薄膜的透明导体的制备和表征,并对其性能进行了比较。在这里,我们演示了通过三种不同的沉积技术(浸涂,真空过滤和Langmuir Blodgett)制造的,富含金属的单壁碳纳米管的薄,透明,光学均匀的导电膜的制造。光学表征表明,通过Langmuir-Blodgett技术,可见光区的最大透射率TM为〜96.3%,最小表面粗糙度Ra〜4.87 nm。 I-V特性显示了真空过滤技术的最小薄层电阻Rs〜3.62×103Ω/ sq和最大电导率σ〜27.65Ω-1cm-1。结果表明,SWCNT沉积技术会显着影响所得薄膜的光学和电学特性。 Langmuir Blodgett法制得的薄膜表面粗糙度最低,为Ra〜4.87 nm,电导率为σ〜0.025Ω-1cm-1,而真空过滤法制得的薄膜最高表面粗糙度为Ra〜12.83 nm,电导率不均匀, σ,范围从〜0.199到〜0.017Ω-1cm-1,具体取决于膜的尺寸。

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