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Effect of heating duration on the synthesis of silicon carbide nanotubes by microwave heating of MWCNTs and silica

机译:加热时间对微波加热多壁碳纳米管和二氧化硅合成碳化硅纳米管的影响

摘要

In this article, the effect of heating duration on the synthesis of silicon carbide nanotubes (SiCNTs) was reported. SiCNTs were synthesized from blend of silicon dioxide (SiO2) and multi-walled carbon nanotubes (MWCNTs) in the ratio of 1:3 by using the microwave heating at 1400°C and maintained at duration of 20, 40 and 60 min, respectively. SiCNTs synthesized at heating duration of 40 and 60 min showed the presence of single phase β-SiC in X-ray diffraction patterns. Meanwhile, field emission scanning electron microscope images showed that SiCNTs were formed and no residual of SiO2 and MWCNTs was observed for SiCNTs formed at heating duration of 40 and 60 min. Transmission electron microscopy images showed the SiCNTs have inter-planar spacing of 0.263 nm and tubular structure of nanotube were retained. The peak corresponded to β-SiC was observed at wavelength of 465 nm from the photoluminescence spectroscopy and associated with energy band gap of 2.67 eV. Absorption bands of Si-C bond were detected at 806.23 cm-1 from the Fourier transform infrared spectra. High purity SiCNTs was obtained at 40 and 60 min as indicated by low weight loss by thermo-gravimetric analysis. 40 min is the most suitable heating duration for the synthesis of single phase β-SiCNTs.
机译:在本文中,报道了加热时间对碳化硅纳米管(SiCNT)合成的影响。通过使用1400°C的微波加热,以比例为1:3的二氧化硅(SiO2)和多壁碳纳米管(MWCNT)的混合物合成SiCNT,并分别保持20、40和60分钟的持续时间。在40和60分钟的加热时间下合成的SiCNT在X射线衍射图中显示出单相β-SiC的存在。同时,场发射扫描电子显微镜图像显示形成SiCNT,并且在加热时间为40和60分钟时形成的SiCNT没有观察到SiO 2和MWCNT的残留。透射电子显微镜图像显示SiCNT具有0.263nm的平面间距并且保留了纳米管的管状结构。从光致发光光谱在465nm的波长处观察到对应于β-SiC的峰,并且与2.67eV的能带隙有关。从傅立叶变换红外光谱在806.23cm-1处检测到Si-C键的吸收带。如通过热重分析的低重量损失所指示的,在40和60分钟时获得高纯度SiCNT。 40分钟是合成单相β-SiCNT最合适的加热时间。

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