首页> 外文OA文献 >Thermal Management of GaN-on-Si High Electron Mobility Transistor by Copper Filled Micro-Trench Structure

【2h】

Thermal Management of GaN-on-Si High Electron Mobility Transistor by Copper Filled Micro-Trench Structure

机译：通过铜填充微沟结构GaN-on-Si高电子移动性晶体管的热管理

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Srikant Kumar Mohanty; Yu-Yan Chen; Ping-Hung Yeh; Ray-Hua Horng;
展开▼
作者单位

展开▼
年度 2019
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Thermal Management of GaN-on-Si High Electron Mobility Transistor by Copper Filled Micro-Trench Structure [J] . Srikant Kumar Mohanty, Yu-Yan Chen, Ping-Hung Yeh, Scientific reports. . 2019,第1期

机译：通过铜填充微沟结构GaN-on-Si高电子移动性晶体管的热管理
2. Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors [J] . Sheng-Xun Zhao, Xiao-Yong Liu, Lin-Qing Zhang, Nanoscale Research Letters . 2016,第1期

机译：热原子层沉积AlN钝化层对GaN-on-Si高电子迁移率晶体管的影响
3. Effect of rapid thermal annealing on the optical and electrical properties of metamorphic high electron mobility transistor structures with composite InGaAs/InP channel [J] . Yuwei Liu, Hong Wang Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2006,第1期

机译：快速热退火对具有复合InGaAs / InP沟道的变质高电子迁移率晶体管结构的光电性能的影响
4. Thermal management of GaN-on-diamond high electron mobility transistors: Effect of the nanostructure in the diamond near nucleation region [C] . Julian Anaya, Huarui Sun, James Pomeroy, IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems . 2016

机译：GaN-on-diamond高电子迁移率晶体管的热管理：金刚石在成核区域附近的纳米结构的影响
5. Impact of electrically and thermally induced physical defects on the reliability of AlGaN/GaN high electron mobility transistors. [D] . Holzworth, Monta Raymond, Jr. 2013

机译：电和热感应物理缺陷对AlGaN / GaN高电子迁移率晶体管的可靠性的影响。
6. Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study [O] . Kyu-Won Jang, In-Tae Hwang, Hyun-Jung Kim, 2020

机译：具有铜填充结构的AlGaN / GaN高电子迁移率晶体管的热分析和工作特性：仿真研究
7. Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study [O] . Kyu-Won Jang, In-Tae Hwang, Hyun-Jung Kim, 2019

机译：用铜填充结构的AlGaN / GaN高电子迁移率晶体管的热分析和操作特性：模拟研究
8. GaN Power Electronics: From GaN-on-Si Lateral Transistor to GaN-on-GaN Vertical Transistor and GaN CMOS IC. [R] . Chu, R., Cao, Y., Li, R., 2017

机译：GaN功率电子器件：从GaN-on-si横向晶体管到GaN-on-GaN垂直晶体管和GaN CmOs IC。

Thermal Management of GaN-on-Si High Electron Mobility Transistor by Copper Filled Micro-Trench Structure

著录项

引文网络

相似文献

相关主题

期刊订阅