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Chemical Vapor Deposition of Carbon Nanotubes on Monolayer Graphene Substrates: Reduced Etching via Suppressed Catalytic Hydrogenation Using C2H4

机译:单层石墨烯基材上碳纳米管的化学气相沉积:使用C2H4通过抑制催化氢化的蚀刻降低

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摘要

In most envisioned applications, full utilization of a graphene-carbonnanotube (CNT) construct requires maintaining the integrity of the graphenelayer during the CNT growth step. In this work, we exhibit an approach towardscontrolled CNT growth atop graphene substrates where the reaction equilibriumbetween source hydrocarbon decomposition and carbon saturation into andprecipitation from the catalyst nanoparticles shifts towards CNT growth ratherthan graphene consumption. By utilizing C2H4 feedstock, we demonstrate that thelow temperature growth permissible with this gas suppresses undesirablecatalytic hydrogenation and dramatically reduces the etching of the graphenelayer to exhibit graphene-CNT hybrids with continuous, undamaged structures.
机译:在大多数设想的应用中,完全利用石墨烯-羰基管(CNT)构建体需要在CNT生长步骤期间维持石墨烯层的完整性。在这项工作中,我们在石墨烯基材上表现出进出的CNT生长的方法,其中反应平衡烃源烃分解和碳饱和度与催化剂纳米颗粒的含糊凝固率朝向CNT生长而达到了石墨烯消耗。通过利用C2H4原料,我们证明这种气体允许的温度生长抑制不需要的催化氢化,并显着减少了石墨烯的蚀刻,以表现出具有连续,未损坏的结构的石墨烯-CNT杂种。

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