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Detector Response to D-D Neutrons and Stability Measurements with 4H Silicon Carbide Detectors

机译：用4H碳化硅探测器对D-D中子和稳定性测量的检测器响应

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Matteo Hakeem Kushoro; Marica Rebai; Marco Tardocchi; Carmen Altana; Carlo Cazzaniga; Eliana De Marchi; Francesco La Via; Laura Meda; Alessandro Meli; Miriam Parisi; Enrico Perelli Cippo; Mario Pillon; Antonio Trotta; Salvo Tudisco; Giuseppe Gorini;
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1. The fast neutron response of 4H silicon carbide semiconductor radiation detectors [J] . Ruddy F.H., Dulloo A.R., Seidel J.G., IEEE Transactions on Nuclear Science . 2006,第3期

机译：4H碳化硅半导体辐射探测器的快速中子响应
2. Measurements of D-D fusion neutrons generated in nanowire array laser plasma using Timepix3 detector [J] . Peter Rubovic, Aldo Bonasera, Petr Burian, Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment . 2021,第Jana1期

机译：使用TimePix3检测器测量纳米线阵列激光等离子体中产生的D-D融合中子
3. New thick silicon carbide detectors: Response to 14 MeV neutrons and comparison with single-crystal diamonds [J] . Rebai M., Rigamonti D., Cancelli S., Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment . 2019,第Deca1期

机译：新的厚碳化硅探测器：对14 MeV中子的响应以及与单晶金刚石的比较
4. Design and Response Testing of Boron-Diffused Silicon Carbide Neutron Detectors for Dosimetry and Monitoring Applications [C] . Krishna C. Mandal, Towhid A. Chowdhury, Cihan Oner, Reactor Dosimetry(STP 1608) . 2018

机译：用于剂量测定和监测应用的硼漫射碳化硅中子探测器的设计与响应测试
5. Silicon Carbide and Diamond Neutron Detectors for Active Interrogation Security Applications. [D] . Hodgson, Michael. 2016

机译：主动询问安全应用的碳化硅和金刚石中子探测器。
6. Radiation Resistance of Silicon Carbide Schottky Diode Detectors in D-T Fusion Neutron Detection [O] . Linyue Liu, Ao Liu, Song Bai, -1

机译：D-T聚变中子检测中碳化硅肖特基二极管检测器的抗辐射性
7. SILICON CARBIDE NEUTRON DETECTOR PROTOTYPE TESTING AT THE JSI TRIGA REACTOR FOR ENHANCED BORDER AND PORTS SECURITY [O] . Vladimir Radulović, Klemen Ambrožič, Ivana Capan, 2021

机译：JSI Triga反应堆的碳化硅中子探测器原型测试，用于增强边框和端口安全性
8. Measurements of Neutron Induced Surface and Bulk Defects in 4H Silicon Carbide [R] . Jones, K. T. 2002

机译：4H碳化硅中子诱导表面和体积缺陷的测量

Detector Response to D-D Neutrons and Stability Measurements with 4H Silicon Carbide Detectors

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