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Inversion Charge Boost and Transient Steep-Slope Induced by Free-Charge-Polarization Mismatch in a Ferroelectric-Metal–Oxide–Semiconductor Capacitor

机译：铁电 - 氧化物半导体电容器中的自由电荷偏振失配致反转电荷升压和瞬态陡坡

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Sou-Chi Chang; Uygar E. Avci; Dmitri E. Nikonov; Ian A. Young;
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年度 2018
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1. Inversion Charge Boost and Transient Steep-Slope Induced by Free-Charge-Polarization Mismatch in a Ferroelectric-Metal–Oxide–Semiconductor Capacitor [J] . Sou-Chi Chang, Uygar E. Avci, Dmitri E. Nikonov, IEEE Journal on Exploratory Solid-State Computational Devices and Circuits . 2018,第2期

机译：铁电金属-氧化物-半导体电容器中的电荷-极化不匹配导致反向电荷升压和瞬态陡坡
2. Mismatch of dielectric constants at the interface of nanometer metal-oxide-semiconductor devices with high-K gate dielectric impacts on the inversion charge density [J] . LING-FENG MAO Pramana . 2011,第4期

机译：纳米金属氧化物半导体器件界面介电常数的不匹配与高K栅极介电质对反型电荷密度的影响
3. Mismatch of dielectric constants at the interface of nanometer metal-oxide-semiconductor devices with high-e??? gate dielectric impacts on the inversion charge density [J] . Ling-Feng Mao1 Pramana . 2011,第4期

机译：在纳米金属氧化物 - 半导体器件的界面处不匹配，具有高E ???栅极介电影响对反转电荷密度
4. Refreshable Decrease In Peak Height Of Ion Beam Induced Transient Current From Silicon Carbide Metal-Oxide-Semiconductor Capacitors [C] . T. Ohshima, N. Iwamoto, S. Onoda, Application of Accelerators in Research and Industry International Conference . 2011

机译：离子束引起的碳化硅金属氧化物 - 氧化物半导体电容器的离子束诱导瞬态电流的峰高的可透明减小
5. The trapped charge interfacial modulation of the electron beam induced current in metal oxide semiconductor capacitors. [D] . Deptuch, Roland George. 1988

机译：金属氧化物半导体电容器中电子束感应电流的俘获电荷界面调制。
6. Fast and slow transient charging of Oxide Semiconductor Transistors [O] . Taeho Kim, Sungho Park, Sanghun Jeon -1

机译：氧化物半导体晶体管的快速和慢速瞬态充电
7. Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates [O] . OConnor Éamon, Cherkaoui Karim, Monaghan Scott, 2012

机译：Si和GaAs衬底上金属氧化物半导体电容器中外围电荷引起的低频电容-电压行为的观察
8. Capacitor mismatch caused by oxide thickness variations in submicron I. C. processes [R] . 1999

机译：由亚微米I.C过程中的氧化物厚度变化引起的电容器不匹配

Inversion Charge Boost and Transient Steep-Slope Induced by Free-Charge-Polarization Mismatch in a Ferroelectric-Metal–Oxide–Semiconductor Capacitor

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