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Temperature-Dependent Optical Properties and Bandgap Characteristics of InAs/GaAs Sub-monolayer Quantum Dot Investigated by Photoreflectance Spectroscopy

机译：通过光反射光谱研究的温度依赖性光学性能和带隙特性/ GaAs亚单层量子点的含量

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Minseak Kim; Sang Jo Lee; Hyun Jun Jo; Geun-Hyeong Kim; Yeong Ho Kim; Sang Jun Lee; Christiana B. Honsberg; Jong Su Kim;
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1. Temperature- and Excitation-power-dependent Optical Properties of InAs/GaAs Quantum Dots by Comparison of Photoluminescence and Photoreflectance Spectroscopy [J] . Kim JS, Ko BS, Yu JI, Journal of the Korean Physical Society . 2009,第2期

机译：通过光致发光和光反射光谱比较InAs / GaAs量子点的温度和激发功率相关的光学性质
2. Morphological and temperature-dependent optical properties of InAs quantum dots on GaAs nanowires with different InAs coverage [J] . Yan Xin, Zhang Xia, Ren Xiaomin, Applied Physics Letters . 2013,第17期

机译：具有不同InAs覆盖率的GaAs纳米线上InAs量子点的形貌和温度相关光学特性
3. Morphological and temperature-dependent optical properties of InAs quantum dots on GaAs nanowires with different InAs coverage [J] . Xin Yan, Xia Zhang, Xiaomin Ren, Applied Physics Letters . 2013,第17期

机译：具有不同InAs覆盖率的GaAs纳米线上InAs量子点的形貌和温度相关光学特性
4. Influence of InGaAs matrix thickness on the optical properties and strain distribution in self-assembled sub-monolayer InAs quantum dot heterostructures [C] . Saranya Reddy Shriram, Ravindra Kumar, Sanowar Alam Gazi, Nanophotonics Conference . 2020

机译：InGaAs基体厚度对自组装亚单层InAs量子点异质结构中光学性质和应变分布的影响
5. Optical and Mechanical Investigation of InAs /GaAs Quantum Dots Solar Cells and InAs Nanowires for the Application of Photovoltaic Device. [D] . Dai, Yushuai. 2013

机译：InAs / GaAs量子点太阳能电池和InAs纳米线在光伏器件中的应用的光学和机械研究。
6. Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers [O] . A. Salhi, S. Alshaibani, Y. Alaskar, 2019

机译：通过InAlAs中间层改变GaAsSb封盖的InAs量子点的光学性质
7. Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors [O] . Ivanov Ts, Borissov K., David J P R, 2012

机译：红外光电探测器量子阱多层结构中InAs / InGaAs / GaAs量子点的光学性质研究

Temperature-Dependent Optical Properties and Bandgap Characteristics of InAs/GaAs Sub-monolayer Quantum Dot Investigated by Photoreflectance Spectroscopy

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