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Electric field assisted annealing and formation of prominent deep-level defect in ion-implanted n-type 4H-SiC

机译：电场辅助退火和离子植入N型4H-SIC中突出深层缺陷的形成

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J. Wong-Leung; B. G. Svensson;
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年度 2008
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1. Electric field assisted annealing and formation of prominent deep-level defect in ion-implanted n-type 4H-SiC [J] . J. Wong-Leung, B. G. Svensson Applied Physicsletters . 2008,第14期

机译：离子注入n型4H-SiC中电场辅助退火及深层缺陷的形成
2. Formation and annealing behavior of prominent point defects in MeV ion implanted n-type epitaxial Si [J] . L. Vines, E.V. Monakhov, J. Jensen, Materials Science and Engineering . 2009,第期

机译：MeV离子注入n型外延Si中突出点缺陷的形成和退火行为
3. High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate [J] . Naoya lwamoto, Alexander Azarov, Takeshi Ohshima, Journal of Applied Physics . 2015,第4期

机译：高温退火对高纯度半绝缘4H-SiC衬底中深层缺陷的影响
4. Observation of Thermal-annealing Evolution of Defects in Ion-implanted 4H-SiC by Luminescence [C] . J.A. Freitas, Jr., K.A. Jones, International Conference on Silicon Carbide and Related Materials; 20050918-23; Pittsburgh,PA(US) . 2006

机译：离子注入4H-SiC发光缺陷的热退火演变观察
5. The effect of electric fields on the formation and annealing of stable radiation induced defects in indium phosphide semiconductor junctions. [D] . Panunto, Michael John. 1996

机译：电场对磷化铟半导体结中稳定的辐射诱导缺陷的形成和退火的影响。
6. Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties [O] . Łukasz Gelczuk, Jan Kopaczek, Thomas B. O. Rockett, -1

机译：分子束外延在低温下生长的n型GaAsBi合金的深层缺陷及其对光学性能的影响
7. High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime [O] . Zippelius Bernd, Suda Jun, Kimoto Tsunenobu 2012

机译：n型4H-SiC的高温退火：对固有缺陷和载流子寿命的影响
8. Solid-State Microwave Annealing of Ion-Implanted 4H-SiC; Journal article [R] . Sundaresan, S. G., Tian, Y., Ridgway, M. C., 2007

机译：离子注入4H-siC的固态微波退火;杂志文章

Electric field assisted annealing and formation of prominent deep-level defect in ion-implanted n-type 4H-SiC

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