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Electrical characterization of defects introduced during sputter deposition of tungsten on n type 4H-SiC

机译：钨溅射期间引入的缺陷缺陷的电学特性

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Shandirai M. Tunhuma; F.D. Auret; M.J. Legodi; J. Nel; M. Diale;
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1. Electrical characterization of defects introduced during sputter deposition of tungsten on n type 4H-SiC [J] . Tunhuma Shandirai M., Auret F. D., Legodi M. J., Materials science in semiconductor processing . 2018,第期

机译：钨溅射期间引入的缺陷缺陷的电气表征
2. Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC [J] . Omotoso E., Meyer W. E., Coelho S. M. M., Materials science in semiconductor processing . 2016,第Null期

机译：在n型4H-SiC上W肖特基触点的电子束沉积过程中引入的缺陷的电特性
3. Electrical Characterization of Defects Introduced During Sputter Deposition of Schottky Contacts on n-type Ge [J] . F.D. AURET, S. COELHO, W.E. MEYER, Journal of Electronic Materials . 2007,第12期

机译：在n型Ge上进行肖特基接触的溅射沉积过程中引入的缺陷的电学特性
4. Electrical characterization of defects introduced in n-type N-doped 4H-SiC during electron beam exposure [C] . Ezekiel Omotoso, Walter Ernst Meyer, Francois Danie Auret, International Conference on Gettering and Defect Engineering in Semiconductor Technology . 2016

机译：电子束曝光期间N型N掺杂4H-SiC中引入的缺陷的电气表征
5. Fabrication and characterization of the electrical and optical properties of n-type thin film transparent conducting oxides deposited by neutralized ion beam sputtering and pulsed laser deposition. [D] . Vanderford, John D. 2011

机译：通过中和离子束溅射和脉冲激光沉积沉积的n型薄膜透明导电氧化物的电学和光学性质的制备和表征。
6. Influence of Thickness and Sputtering Pressure on Electrical Resistivity and Elastic Wave Propagation in Oriented Columnar Tungsten Thin Films [O] . Asma Chargui, Raya El Beainou, Alexis Mosset, 2020

机译：厚度和溅射压力对定向柱状钨薄膜电阻率和弹性波传播的影响
7. Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC [O] . Omotoso, Ezekiel, Meyer, W.E. (Walter Ernst), Coelho, Sergio M.M., 2016

机译：n型4H-siC上W肖特基接触电子束沉积过程中引入缺陷的电学特性
8. Electrical and Optical Characterization of Intrinsic and Ion-Implantation Induced Defects in 6H- and 4H-SiC [R] . Scott, M. B. 1999

机译：6H-和4H-siC中固有和离子注入诱导缺陷的电学和光学表征

Electrical characterization of defects introduced during sputter deposition of tungsten on n type 4H-SiC

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