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Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications

机译：开发1550纳米INAS / GAAS量子点可饱和吸收镜，带有短段超晶格覆盖结构，朝向飞秒光纤激光应用

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Cheng Jiang; Jiqiang Ning; Xiaohui Li; Xu Wang; Ziyang Zhang;
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1. GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics [J] . Utrilla A.D., Reyes D.F., Ulloa J.M., Applied Physics Letters . 2014,第4期

机译：GaAsSb / GaAsN短周期超晶格作为覆盖层，用于改进的基于InAs量子点的光电
2. GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics [J] . A. D. Utrilla, D. F. Reyes, J. M. Ulloa, Applied Physics Letters . 2014,第4期

机译：GaAsSb / GaAsN短周期超晶格作为覆盖层，用于改进的基于InAs量子点的光电
3. Current Injection Laser Operation of GaAs/InAs Short-Period Superlattice/InP(411) Quantum Dot Laser Diodes with InAlAs Current Blocking Layer [J] . Takashi SHIMADA, Shigehiko HASEGAWA, Hajime ASAHI Japanese Journal of Applied Physics. Part 2, Letters . 2005,第20a23期

机译：具有InAlAs电流阻挡层的GaAs / InAs短周期超晶格/ InP（411）量子点激光二极管的电流注入激光操作
4. InAs/GaAs Quantum Dot Saturable Absorber Mirror for Passive Mode-Locking of Nd:YVO_4 Lasers at 1064 nm [C] . C. Scurtescu, Z. Y. Zhang, A. J. Alcock, Conference on Lasers Electro-Optics Quantum Electronics and Laser Science Conference . 2007

机译：INAS / GaAs量子点可被动模式锁定的宽透镜镜：YVO_4激光器1064 nm
5. Optical and Mechanical Investigation of InAs /GaAs Quantum Dots Solar Cells and InAs Nanowires for the Application of Photovoltaic Device. [D] . Dai, Yushuai. 2013

机译：InAs / GaAs量子点太阳能电池和InAs纳米线在光伏器件中的应用的光学和机械研究。
6. Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications [O] . Cheng Jiang, Jiqiang Ning, Xiaohui Li, 2019

机译：具有飞秒光纤激光器应用的短周期超晶格封盖结构的1550 nm InAs / GaAs量子点可饱和吸收镜的开发
7. Molecular beam epitaxy of modulation doped N-AlGaAs/(InAs/GaAs)/GaAs superlattices at thikness of InAs layers below and near threshold of nucleation quantum dots for high frequency applications [O] . Mokerov V.G., Fedorov Yu.V., Hook A.V., 2000

机译：在高频应用中，在成核量子点阈值以下和附近的InAs层厚度下，调制掺杂N-AlGaAs /（InAs / GaAs）/ GaAs超晶格的分子束外延

Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications

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