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Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature

机译：Inn Inn In / In + C-GaN基质的动态原子层外延的系统研究与精细结构套/ GaN量子阱的制备：高生长温度的作用

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Akihiko Yoshikawa; Kazuhide Kusakabe; Naoki Hashimoto; Eun-Sook Hwang; Daichi Imai; Takaomi Itoi;
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年度 2016
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1. Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature [J] . Akihiko Yoshikawa, Kazuhide Kusakabe, Naoki Hashimoto, Journal of Applied Physics . 2016,第22期

机译：在+ c-GaN基质上/中的InN的动态原子层外延和精细结构的InN / GaN量子阱的制造的系统研究：高生长温度的作用
2. Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Impact of excess In-atoms at high growth temperature [J] . Akihiko Yoshikawa, Kazuhide Kusakabe, Naoki Hashimoto, Journal of Applied Physics . 2016,第23期

机译：在+ c-GaN基质上/中的InN的动态原子层外延和精细结构的InN / GaN量子阱的制造的系统研究：高生长温度下过量In原子的影响
3. Dynamic atomic layer epitaxy of InN on/in +c-GaN matrix: Effect of 'In+N' coverage and capping timing by GaN layer on effective InN thickness [J] . Akihiko Yoshikawa, Kazuhide Kusakabe, Naoki Hashimoto, Applied Physics Letters . 2016,第2期

机译：/ c + GaN基质中InN的动态原子层外延：GaN层的'In + N'覆盖率和覆盖时间对有效InN厚度的影响
4. Growth of InN by Plasma-Assisted Molecular Beam Epitaxy on InN/GaN and p-GaN Templates [C] . E. D. Readinger, G. D. Chern, M. L. Reed, State-of-the-Art Program on Compound Semiconductors . 2007

机译：Inn / GaN和P-GaN模板上等离子辅助分子束外延
5. Growth and Behaviors of Inn/Gan Multiple Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy [D] . Li, Chen. 2018

机译：等离子体辅助分子束外延的Inn / GaN多量子孔的生长和行为
6. In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy [O] . Cao YG, Wu HS, Xie MH, 2005

机译：通过分子束外延在stranski-Krastanov生长GaN（0001）期间原位揭示闪锌矿InN润湿层

Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature

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