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Extension of the LDA-1/2 method to the material class of bismuth containing III–V semiconductors

机译：LDA-1/2方法的延伸到含有III-V半导体的铋的材料类别

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Sven C. Liebscher; Lars C. Bannow; Jörg Hader; Jerome V. Moloney; Stephan W. Koch;
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1. Extension of the LDA-1/2 method to the material class of bismuth containing III–V semiconductors [J] . Sven C. Liebscher, Lars C. Bannow, J?rg Hader, AIP Advances . 2020,第11期

机译：LDA-1/2方法的延伸到含有III-V半导体的铋的材料类别
2. Small-molecule surface-modified bismuth-based semiconductors as a new class of visible-light-driven photocatalytic materials: Structure-dependent photocatalytic properties and photosensitization mechanism [J] . Chemical engineering journal . 2020,第期

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3. New Class of Holographic Materials Based on Semiconductor CdF_2 Crystals with Bistable Centers: III. Mechanisms of Recording and Decay of Holographic Gratings [J] . A. S. Shcheulin, A. E. Angervaks, A. I. Ryskin, Optics and Spectroscopy . 2002,第1期

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8. Research and Development on Technologies for the Preparation of III-V Semiconductor Materials and on Methods for Evaluation of the Quality of These Materials: Production of Gallium Phosphide Crystals [R] . Blaette, M. 1982

机译：III-V半导体材料制备技术的研究与开发及这些材料质量评价方法：磷化镓晶体的制备

Extension of the LDA-1/2 method to the material class of bismuth containing III–V semiconductors

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