首页> 外文OA文献 >PECULIARITY OF FORMING TRANSPARENT CONDUCTING FILMS ON BASIS OF OXIDES INDIUM-TIN FOR CONTACTS ON GAN-BASED LIGHT EMITTING DIODES

【2h】

PECULIARITY OF FORMING TRANSPARENT CONDUCTING FILMS ON BASIS OF OXIDES INDIUM-TIN FOR CONTACTS ON GAN-BASED LIGHT EMITTING DIODES

机译：基于氧化物铟锡的透明导电膜的特殊性，用于GaN的发光二极管接触

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
K. D. Vanyukhin; R. V. Zakharchenko; N. I. Kargin; L. A. Seidman;
展开▼
作者单位

展开▼
年度 2015
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Epitaxial Sb-doped SnO2 and Sn-doped In2O3 transparent conducting oxide contacts on GaN-based light emitting diodes [J] . Tsai Min-Ying, Bierwagen Oliver, Speck James S. Thin Solid Films . 2016,第Apra30期

机译：GaN基发光二极管上的外延掺Sb的SnO2和Sn掺杂的In2O3透明导电氧化物触点
2. The Use of Transparent Conducting Indium-Zinc Oxide Film as a Current Spreading Layer for Vertical-Structured High-Power GaN-Based Light-Emitting Diodes [J] . Shui-Jinn Wang, Shiue-Lung Chen, Kai-Ming Uang, IEEE Photonics Technology Letters . 2006,第10期

机译：透明导电铟锌氧化物薄膜作为垂直结构大功率GaN基发光二极管的电流扩散层的用途
3. Improvement in performance of GaN-based light-emitting diodes with indium tin oxide based transparent ohmic contacts [J] . Y. Yao, C. Jin, Z. Dong, Displays . 2007,第3期

机译：具有基于铟锡氧化物的透明欧姆接触的GaN基发光二极管的性能改进
4. Improvement in Performance of GaN-based Light-emitting Diodes with Indium Tin Oxide Based Transparent Ohmic Contacts [C] . Y. Yao, C. C. Jin, Z. Dong, 2007亚洲显示国际会议 . 2007

机译：使用基于氧化铟锡的透明欧姆接触改善GaN基发光二极管的性能
5. Metal-organic chemical vapor deposition of indium oxide based transparent conducting oxide thin films: Precursor synthesis, film growth and characterization, and their application in polymer light-emitting diode devices. [D] . Ni, Jun. 2005

机译：氧化铟基透明导电氧化物薄膜的金属有机化学气相沉积：前体合成，膜生长和表征及其在聚合物发光二极管器件中的应用。
6. Sb2O3/Ag/Sb2O3 Multilayer Transparent Conducting Films For Ultraviolet Organic Light-emitting Diode [O] . Chunyan Song, Nan Zhang, Jie Lin, -1

机译：用于紫外线有机发光二极管的Sb2O3 / Ag / Sb2O3多层透明导电膜
7. High-brightness GaN-based light-emitting diode with indium tin oxide based transparent ohmic contact [O] . Soo Young Kim, Ho Won Jang, Jong-Lam Lee 2004

机译：基于高亮度GaN的发光二极管，具有基于氧化锡的透明欧姆接触

PECULIARITY OF FORMING TRANSPARENT CONDUCTING FILMS ON BASIS OF OXIDES INDIUM-TIN FOR CONTACTS ON GAN-BASED LIGHT EMITTING DIODES

著录项

引文网络

相似文献

相关主题

期刊订阅