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First observation of electronic trap levels in freestanding GaN crystals extracted from Si substrates by hydride vapour phase epitaxy

机译：氢化物气相外延从Si基材提取的独立GaN晶体中电子捕集水平的首先观察

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Moonsang Lee; Chang Wan Ahn; Thi Kim Oanh Vu; Hyun Uk Lee; Eun Kyu Kim; Sungsoo Park;
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1. First observation of electronic trap levels in freestanding GaN crystals extracted from Si substrates by hydride vapour phase epitaxy [J] . Moonsang Lee, Chang Wan Ahn, Thi Kim Oanh Vu, Scientific reports. . 2019,第1期

机译：氢化物气相外延从Si基材提取的独立GaN晶体中电子捕集水平的首先观察
2. Low-resistivity m-plane freestanding GaN substrate with very low point-defect concentrations grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method [J] . Kazunobu Kojima, Yusuke Tsukada, Erika Furukawa, Applied physics express . 2015,第9期

机译：通过氢化物气相外延在氨热法合成的GaN籽晶上生长的具有低点缺陷浓度的低电阻率m面独立式GaN衬底
3. Epitaxial lateral overgrowth of GaN on molecular beam epitaxy GaN buffer layers on Si substrates by hydride vapour phase epitaxy [J] . Gu SL., Shi Y., Zheng YD., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2001,第13期

机译：氢化物气相外延在分子束外延上GaN的外延横向过生长Si衬底上的GaN缓冲层
4. Preparation of 3 inch freestanding GaN substrates by hydride vapor phase epitaxy with void-assisted separation [C] . T. Yoshida, Y. Oshima, T. Eri, International Conference of Nitride Semiconductors . 2008

机译：用空隙辅助分离制备氢化物气相外延3英寸独立的GaN基材
5. Formation of gallium nitride templates and freestanding substrates by hydride vapor phase epitaxy for homoepitaxial growth of III-nitride devices. [D] . Williams, Adrian Daniel. 2007

机译：通过氢化物气相外延形成氮化镓模板和独立衬底，用于III族氮化物器件的同质外延生长。
6. First observation of electronic trap levels in freestanding GaN crystals extracted from Si substrates by hydride vapour phase epitaxy [O] . Moonsang Lee, Chang Wan Ahn, Thi Kim Oanh Vu, -1

机译：通过氢化物气相外延从硅衬底提取的独立式GaN晶体中电子陷阱能级的初步观察
7. Highly Efficient Excitonic Recombination of Non-polar ($$11overline{2}0$$) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy [O] . Moonsang Lee, Dongyun Lee, Hionsuck Baik, 2020

机译：高效的非极性激发重组非极性（$ 11 overline {2} 0 $$）GaN纳米晶体用于可见光发光器通过氢化物蒸汽相外延

First observation of electronic trap levels in freestanding GaN crystals extracted from Si substrates by hydride vapour phase epitaxy

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