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Improvement of Thermoelectric Properties of Chimney-Ladder Compounds by Introducing High-Density Interfaces

机译：通过引入高密度界面改善烟囱梯化合物的热电性能

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Norihiko L. Okamoto; Haruyuki Inui;
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年度 2012
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1. Glass-like Lattice Thermal Conductivity and Thermoelectric Properties of Incommensurate Chimney-Ladder Compound FeGe gamma [J] . Sato Naoki, Ouchi Hideyasu, Takagiwa Yoshiki, Chemistry of Materials: A Publication of the American Chemistry Society . 2016,第2期

机译：不等烟囱-梯子化合物FeGeγ的玻璃状晶格热导率和热电性能
2. Crystal Structure and Thermoelectric Properties of the Incommensurate Chimney-Ladder Compound VGe gamma (gamma similar to 1.82) [J] . Hamada Haruki, Kikuchi Yuta, Hayashi Kei, Journal of Electronic Materials . 2016,第3期

机译：不相称的烟囱-梯子化合物VGe伽玛（类似于1.82的伽玛）的晶体结构和热电性质
3. Crystal structure and thermoelectric properties of the incommensurate chimney-ladder compound RhGe_γ (γ ～ 1.293) [J] . Yuzuru Miyazaki, Takaki Nakajo, Yuta Kikuchi, Journal of Materials Research . 2015,第17期

机译：不相称的烟梯化合物RhGe_γ（γ〜1.293）的晶体结构和热电性能
4. Crystal Structures and Thermoelectric Properties of Ru_(1-x)Re_xSi_y, Chimney-Ladder Compounds [C] . Akira Ishida, Norihiko L. Okamoto, Kyosuke Kishida Materials Research Society Symposium . 2007

机译：ru_（1-x）Re_xsi_y，烟囱梯化合物的晶体结构和热电性能
5. An Experimental Investigation towards Improvement of Thermoelectric Properties of Strontium Titanate Ceramics. [D] . Mehdizadeh Dehkordi, Arash. 2014

机译：改善钛酸锶陶瓷热电性能的实验研究。
6. Enhancement of thermoelectric properties of La-doped SrTiO3 bulk by introducing nanoscale porosity [O] . Al Jumlat Ahmed, Sheik Md. Kazi Nazrul Islam, Ridwone Hossain, 2019

机译：通过引入纳米级孔隙率来增强La掺杂SrTiO3块的热电性能
7. Thermoelectric properties of ternary and Al-containing quaternary Ru1-xRexSiy chimney-ladder compounds [O] . Kishida Kyosuke, Ishida Akira, Koyama Tatsuya, 2009

机译：Ru1-xRexSiy三元及含铝四元烟囱阶梯化合物的热电性能
8. Improvement of Thermoelectric-Properties for Mg-Based Quaternary Compounds With Doping via Bulk Mechanical Alloying [R] . Aizawa, T. 2010

机译：用体相合金化掺杂改善mg基四元化合物的热电性能

Improvement of Thermoelectric Properties of Chimney-Ladder Compounds by Introducing High-Density Interfaces

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