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Formation of SiO2 film by chemical vapor deposition enhanced by atomic species extracted from a surface-wave generated plasma

机译：通过从表面波产生的等离子体提取的原子物种通过化学气相沉积形成SiO2膜

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H. Okada; M. Baba; M. Furukawa; K. Yamane; H. Sekiguchi; A. Wakahara;
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1. Effect of the boron-to-nitrogen ratio on leakage current characteristics of boron nitride films prepared by surface-wave plasma enhanced chemical vapor deposition [J] . Kamimura Y., Matsuura T., Teii K., Thin Solid Films . 2020 ,第Jul31期

机译：通过表面波等离子体增强化学气相沉积的硼 - 氮比对氮化硼膜漏电流特性的影响
2. Deposition of SiO2 and TiO2 thin films by plasma enhanced chemical vapor deposition for antireflection coating [J] . Martinet C, Paillard V, Gagnaire A, Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 1997 ,第0期

机译：等离子体增强化学气相沉积法制备SiO2和TiO2薄膜用于减反射膜
3. Multiscale plasma and feature profile simulations of plasma-enhanced chemical vapor deposition and atomic layer deposition processes for titanium thin film fabrication [J] . Denpoh Kazuki, Moroz Paul, Kato Taiki, Japanese journal of applied physics . 2020 ,第SH期

机译：多尺度等离子体和特征轮廓型等离子体增强化学气相沉积和原子层沉积工艺的钛薄膜制造
4. Organometallic Chemical Vapor Deposition of Silicon Nitride Films Enhanced by Atomic Nitrogen Generated from Surface-Wave Plasma [C] . H. Okad, M. Kato, T. Ishimaru, Irago Conference . 2014

机译：由表面波等离子体产生的原子氮气增强的氮化硅膜的有机金属化学气相沉积
5. An in situ x-ray photoelectron spectroscopy analysis of thin films created through physical vapor deposition of aluminum and plasma enhanced chemical vapor deposition of trimethylsilane. [D] . Scott, Paul Robert, Jr. 2007

机译：通过铝的物理气相沉积和等离子体增强的三甲基硅烷化学气相沉积产生的薄膜的原位X射线光电子能谱分析。
6. Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films [O] . Mateusz Œmietana, Robert Mroczyński, Norbert Kwietniewski 2014

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7. Chemical vapor deposition of silicon nitride film enhanced by surface-wave plasma for surface passivation of AlGaN/GaN device [O] . H. Okada, K. Kawakami, M. Shinohara, 2015

机译：通过表面波等离子体进行氮化硅膜的化学气相沉积，用于AlGaN / GaN装置的表面钝化
8. Plasma-Enhanced Chemical Vapor Deposition of SiOx Films Using Electron Beam Generated Plasmas [R] . Leonhardt, D., Walton, S. G., Holm, R. T. 2009

机译：用电子束生成等离子体的等离子体增强化学气相沉积siOx薄膜

Formation of SiO2 film by chemical vapor deposition enhanced by atomic species extracted from a surface-wave generated plasma

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