首页> 外文OA文献 >Formation and Dissolution of Mesoporous Layer during Metal-Particle-Assisted Etching of n-Type Silicon

【2h】

Formation and Dissolution of Mesoporous Layer during Metal-Particle-Assisted Etching of n-Type Silicon

机译：N型硅金属颗粒辅助蚀刻期间介孔层的形成和溶解

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Ayumu MATSUMOTO; Keishi IWAMOTO; Yuki SHIMADA; Kyohei FURUKAWA; Shun MAJIMA; Shinji YAE;
展开▼
作者单位

展开▼
年度 2021
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Synthesis and characterization of n-type lightly doped mesoporous silicon nanowires through 1 -MACE, influence of etching solution temperature [J] . Somaye Ashrafabadi, Hosein Eshghi Journal of materials science . 2018,第8期

机译：1-MACE合成n型轻掺杂介孔硅纳米线及其表征，腐蚀液温度的影响
2. Structural, Optical, and Thermal Analysis of n-Type Mesoporous Silicon Prepared by Electrochemical Etching [J] . Melhem Amer, Meneses Domingos De Sousa, Andreazza-Vignolles Caroline, The journal of physical chemistry, C. Nanomaterials and interfaces . 2015,第37期

机译：通过电化学蚀刻制备的n型中孔硅的结构，光学和热分析
3. Fabrication of n-type mesoporous silicon nanowires by one-step etching [J] . To W.-K., Tsang C.-H., Li H.-H., Nano letters . 2011,第12期

机译：一步蚀刻法制备n型介孔硅纳米线
4. CONTACT FORMATION ON BORON DOPED SILICON SUBSTRATES FROM PASSIVATING PECV-DEPOSITED DIELECTRIC DOPING LAYERS WITH ANTI-REFLECTIVE PROPERTIES BY SCREEN-PRINTING AG PASTES FOR HIGH-EFFICIENCY N-TYPE SILICON SOLAR CELLS [C] . Josh Engelhardt, Alexander Frey, Susanne Fritz, European Photovoltaic Solar Energy Conference and Exhibition . 2015

机译：丝网印刷AG糊剂钝化PECV沉积的具有抗反射特性的介电掺杂层在硼掺杂硅基质中的接触形成，用于高效N型硅太阳能电池
5. Formation of Porous Layers by Electrochemical Etching of Germanium and Gallium Arsenide for Cleave Engineered Layer Transfer (CELT) Application in High Efficiency Multi-Junction Solar Cells. [D] . Fong, David Michael. 2012

机译：电化学蚀刻锗和砷化镓形成的多孔层，用于高能效多结太阳能电池的分裂工程层转移（CELT）应用。
6. Formation and Evaluation of Silicon Substrate with Highly-Doped Porous Si Layers Formed by Metal-Assisted Chemical Etching [O] . Yijie Li, Nguyen Van Toan, Zhuqing Wang, 2021

机译：用金属辅助化学蚀刻形成高掺杂多孔Si层的硅衬底的形成与评价
7. Fully tensile strained partial silicon-on-insulator n-type lateral-double-diffused metal-oxide-semiconductor field effect transistor using localized contact etching stop layers [O] . Xiangzhan Wang, Changgui Tan, Xi Zou, 2017

机译：完全拉伸的应变部分硅绝缘体n型采用局域化的横向双扩散金属氧化物半导体场效应晶体管接触蚀刻停止层
8. MOCVD Growth and Etching of N-Type GaN Layers on HPVE-Grown Templates and Free-Standing GaN Substrates [R] . Weyher, J. L. 2005

机译：在HpVE生长的模板和自支撑GaN衬底上的N型GaN层的mOCVD生长和蚀刻

Formation and Dissolution of Mesoporous Layer during Metal-Particle-Assisted Etching of n-Type Silicon

著录项

引文网络

相似文献

相关主题

期刊订阅