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Effect of Pad Buffing process on Material Removal Characteristics in Silicon Chemical Mechanical Polishing

机译：垫缓冲过程对硅化学机械抛光中材料去除特性的影响

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1. Analyses and experimental confirmation of removal performance of silicon oxide film in the chemical-mechanical polishing (CMP) process with pattern geometry of concentric groove pads [J] . Chin-Chung Wei, Jeng-Haur Horng, An-Chen Lee, Wear: an International Journal on the Science and Technology of Friction, Lubrication and Wear . 2011,第3a4期

机译：具有同心凹槽垫图案几何形状的化学机械抛光（CMP）过程中氧化硅膜去除性能的分析和实验确认
2. A study of material removal amount of sapphire wafer in application of chemical mechanical polishing with different polishing pads [J] . Zone-Ching Lin, Wei-Shuen Huang, Ju-Shiau Tsai Journal of Mechanical Science and Technology . 2012,第8期

机译：不同抛光垫化学机械抛光中蓝宝石晶片材料去除量的研究
3. A study of material removal amount of sapphire wafer in application of chemical mechanical polishing with different polishing pads [J] . Zone-Ching Lin, Wei-Shuen Huang, Ju-Shiau Tsai Journal of Mechanical Science and Technology . 2012,第8期

机译：不同抛光垫化学机械抛光中蓝宝石晶片材料去除量的研究
4. Pad Surface Roughness Effect on Material Removal Characteristics in Chemical Mechanical Polishing [C] . Hyoung-jae Kim, Hae-do Jeong, Jae-hong Park, 精密工学会学術講演会 . 2005

机译：垫表面粗糙度对化学机械抛光材料去除特性的影响
5. Tunable removal rates of silicon dioxide, silicon nitride and polysilicon films during chemical mechanical polishing. [D] . Dandu, Veera P. R. 2010

机译：化学机械抛光过程中可调节的二氧化硅，氮化硅和多晶硅膜的去除率。
6. Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping [O] . Yong Hu, Dong Shi, Ye Hu, 2018

机译：超声化学机械抛光与超声研磨相结合的单晶碳化硅晶片材料去除及表面生成研究
7. Material Removal Distribution of Chemical Mechanical Polishing by the Bionic Polishing Pad with Phyllotactic Pattern [O] . Yushan Lu, Jun Wang, Nan Li, 2016

机译：用仿生模式仿生抛光垫进行化学机械抛光的材料去除分布

Effect of Pad Buffing process on Material Removal Characteristics in Silicon Chemical Mechanical Polishing

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