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Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process

机译：标准CMOS工艺制造的光电双控制负差分电阻器件

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Jia Cong; Luhong Mao; Sheng Xie; Fan Zhao; Dong Yan; Weilian Guo;
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1. Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process [J] . Cong Jia, Mao Luhong, Xie Sheng, Photonics Journal, IEEE . 2019,第3期

机译：采用标准CMOS工艺制造的光电双控制负差分电阻器件
2. Novel multiple-selected and multiple-valued memory design using negative differential resistance circuits suitable for standard SiGe-based BiCMOS process [J] . Kwang-Jow Gan, Cher-Shiung Tsai, Dong-Shong Liang Analog Integrated Circuits and Signal Processing . 2009,第2期

机译：采用负差分电阻电路的新型多选多值存储器设计，适用于基于标准SiGe的BiCMOS工艺
3. Novel multiple-selected and multiple-valued memory design using negative differential resistance circuits suitable for standard SiGe-based BiCMOS process [J] . Kwang-Jow Gan, Cher-Shiung Tsai, Dong-Shong Liang Analog Integrated Circuits and Signal Processing . 2009,第2期

机译：新型多元值和多值存储器设计，适用于基于标准SiGe的BICMOS工艺的负差分电阻电路
4. OR and NOR Logic Circuit Design Using Negative Differential Resistance Device Fabricated by CMOS Process [C] . Kwang-Jow Gan, Dong-Shong Liang, Cher-Shiung Tsai, IEEE Conference on Electron Devices and Solid-State Circuits . 2005

机译：或者使用CMOS工艺制造的负差分电阻器件和逻辑电路设计
5. Negative differential resistance devices and their circuit applications. [D] . Lin, Cheng-Hui. 2001

机译：负差分电阻器件及其电路应用。
6. Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition [O] . Yulin Feng, Peng Huang, Zheng Zhou, 2019

机译：原子层沉积在Ru基RRAM器件中的负微分电阻效应
7. A novel lambda negative-resistance transistor in the 0.5 μm standard CMOS process [O] . Yan Chen, LuHong Mao, WeiLian Guo, 2012

机译：0.5μm标准CMOS工艺的新型Lambda负电阻晶体管

Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process

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