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A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques

机译：利赫福德光谱法，X射线衍射和光致发光技术的外延IngaAsbi / InP结构的对比研究

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M. K. Sharpe; I. P. Marko; D. A. Duffy; J. England; E. Schneider; M. Kesaria; V. Fedorov; E. Clarke; C. H. Tan; S. J. Sweeney;
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1. A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques [J] . Sharpe M. K., Marko I. P., Duffy D. A., Journal of Applied Physics . 2019,第12期

机译：使用卢瑟福背散射光谱，X射线衍射和光致发光技术对外延InGaAsBi / InP结构进行比较研究
2. Simultaneous Real-time X-ray Diffraction Spectroscopy, Rutherford Backscattering Spectrometry, And Sheet Resistance Measurements To Study Thin Film Growth Kinetics By Kissinger Plots [J] . D. Smeets, J. Demeulemeester, D. Deduytsche, Journal of Applied Physics . 2008,第10期

机译：同时进行实时X射线衍射光谱，卢瑟福背散射光谱和薄层电阻测量，以通过Kissinger图研究薄膜生长动力学
3. Measurement of InAsBi mole fraction and InBi lattice constant using Rutherford backscattering spectrometry and X-ray diffraction [J] . A. J. Shalindar, P. T. Webster, B. J. Wilkens, Journal of Applied Physics . 2016,第14期

机译：使用卢瑟福反向散射光谱和X射线衍射测量InAsBi摩尔分数和InBi晶格常数
4. Comparative study of ion implantation caused damage depth profiles in polycrystalline and single crystalline silicon studied by spectroscopic ellipsometry and Rutherford backscattering spectrometry [C] . P.Petrick, T.Lohner, M.Fried, E-MRS meeting symposium J on ion implantation into semiconductors, oxides and ceramics . 1999

机译：离子植入的比较研究引起了光谱椭圆形测定法和Rutherford反向散射光谱法研究的多晶和单晶硅中的损伤深度曲线
5. Metrology of Epitaxial Thin Films and Periodic Nanostructures using High Resolution X-Ray Diffraction Techniques. [D] . Medikonda, Manasa. 2014

机译：使用高分辨率X射线衍射技术的外延薄膜和周期性纳米结构的计量学。
6. Twin domain imaging in topological insulator Bi2Te3 and Bi2Se3 epitaxial thin films by scanning X-ray nanobeam microscopy and electron backscatter diffraction [O] . Dominik Kriegner, Petr Harcuba, Jozef Veselý, -1

机译：通过扫描X射线纳米束显微镜和电子背散射衍射在拓扑绝缘体Bi2Te3和Bi2Se3外延薄膜中进行双畴成像
7. Photoluminescence and x-ray diffraction studies of the diffusion behavior of lattice matched InGaAs/InP heterostructures [O] . Bollet F, Gillin WP 2003

机译：晶格匹配的InGaAs / InP异质结构扩散行为的光致发光和x射线衍射研究
8. Photoluminescence spectroscopy and Rutherford backscattering channeling evaluation of various capping techniques for rapid thermal annealing of ion-implanted ZnSe [R] . Allen, E. L. , Zach, F. X. , Yu, K. M. , 1994

机译：离子注入Znse快速热退火的各种加帽技术的光致发光光谱和卢瑟福背散射通道评价

A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques

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