Isolation of III-V/Ge Multijunction Solar Cells by Wet Etching

摘要

Microfabrication cycles of III-V multijunction solar cells include several technological steps and end with a wafer dicing step to separate individual cells. This step introduces damage at lateral facets of the junctions that act as charge trapping centers, potentially causing performance and reliability issues, which become even more important with today’s trend of cell size reduction. In this paper we propose a process of wet etching of microtrenches that allows electrical isolation of individual solar cells with no damage to the sidewalls. Etching with bromine-methanol, the solution that is typically used for nonselective etching of III-V compounds, results in the formation of unwanted holes on the semiconductor surfaces. We investigate the origin of holes formation and discuss methods to overcome this effect. We present an implementation of the isolation step into a solar cell fabrication process flow. This improved fabrication process opens the way for improved die strength, yield, and reliability.