Next-generation electronics calls for new materials beyond silicon forincreased functionality, performance, and scaling in integrated circuits.Carbon nanotubes and semiconductor nanowires are at the forefront of thesematerials, but have challenges due to the complex fabrication techniquesrequired for large-scale applications. Two-dimensional (2D) gapless grapheneand semiconducting transition metal dichalcogenides (TMDCs) have emerged aspromising electronic materials due to their atomic thickness, chemicalstability and scalability. Difficulties in the assembly of 2D electronicstructures arise in the precise spatial control over the metallic andsemiconducting atomic thin films. Ultimately, this impedes the maturity ofintegrating atomic elements in modern electronics. Here, we report thelarge-scale spatially controlled synthesis of the single-layer semiconductormolybdenum disulfide (MoS2) laterally in contact with conductive graphene.Transition electron microscope (TEM) studies reveal that the single-layer MoS2nucleates at the edge of the graphene, creating a lateral 2D heterostructure.We demonstrate such chemically assembled 2D atomic transistors exhibit hightransconductance (10 uS), on-off ratios (10^6), and mobility (20 cm^2 V^-1s^-1). We assemble 2D logic circuits, such as a heterostructure NMOS inverterwith a high voltage gain, up to 70, enabled by the precise site selectivityfrom atomically thin conducting and semiconducting crystals. This scalablechemical assembly of 2D heterostructures may usher in a new era intwo-dimensional electronic circuitry and computing.
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