Resonant tunneling diodes (RTDs) have been extensively studied due to their potential applications in very high speed electronics, optical communications, and terahertz generation. In this work, we report the latest results on the characterization of the resonant tunneling diode photo-detectors (RTD-PDs), incorporating InGaAlAs light sensitive layers for sensing at the telecommunication wavelength of λ = 1310 nm. We have measured responsivities up to 28.8 A/W and light induced voltage shift of 204.8 V/W for light injection powers around 0.25 mW.
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机译：由于谐振隧穿二极管（RTD）在超高速电子设备，光通信和太赫兹发电中的潜在应用，因此已被广泛研究。在这项工作中，我们报告了有关共振隧穿二极管光电探测器（RTD-PDs）表征的最新结果，该探测器结合了InGaAlAs光敏层，可在λ= 1310 nm的电信波长下进行感应。对于0.25 mW左右的光注入功率，我们已经测量出高达28.8 A / W的响应度和204.8 V / W的光感应电压偏移。
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