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Curie–Weiss behavior of the low-temperature paramagnetic susceptibility of semiconductors doped and compensated with hydrogen-like impurities

机译：半导体的低温顺磁性易感性的Curie-Weiss行为掺杂并用氢气杂质补偿

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N. A. Poklonski; A. N. Dzeraviaha; S. A. Vyrko; A. G. Zabrodskii; A. I. Veinger; P. V. Semenikhin;
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1. Curie–Weiss behavior of the low-temperature paramagnetic susceptibility of semiconductors doped and compensated with hydrogen-like impurities [J] . N. A. Poklonski, A. N. Dzeraviaha, S. A. Vyrko, AIP Advances . 2021,第5期

机译：半导体的低温顺磁性易感性的Curie-Weiss行为掺杂并用氢气杂质补偿
2. Magnetic susceptibility of the rare earth element impurities in the Ⅳ-Ⅵ semiconductors and Curie-Weiss law [J] . D.M. Zayachuk Journal of magnetism and magnetic materials . 2010,第1期

机译：Ⅳ-Ⅵ族半导体中稀土元素杂质的磁化率和居里-韦斯定律
3. Calculation of the parameters for the Fano resonance in the impurity photocurrent spectrum of semiconductors doped with hydrogen-like donors [J] . V Ya Aleshkin, D I Burdeiny, L V Gavrilenko Semiconductor science and technology . 2011,第4期

机译：掺杂有氢供体的半导体的杂质光电流谱中的Fano共振参数的计算
4. Influence of temperature independent contribution of magnetic susceptibility on the Curie-Weiss law [C] . T. Gron, A. W. Pacyna, E. Malicka International Conference on Solid Compounds of Transition Elements . 2011

机译：温度自由贡献对静脉威丝法的影响
5. Internal Stark Effect Caused by Inhomogeneous Distribution of Ionized Impurities in Highly Compensated Semiconductors [D] . Harada, Yoshiyuki 1995

机译：高补偿半导体中离子杂质的不均匀分布引起的内部斯塔克效应
6. On the deviation from a Curie–Weiss behavior of the ZnFe2O4 susceptibility: A combined ab-initio and Monte-Carlo approach [O] . J. Melo Quintero, K.L. Salcedo Rodríguez, F.A. Gómez Albarracín, 2019

机译：ZnFe2O4磁化率与居里·威斯行为的偏离：从头算和蒙特卡洛方法
7. Theory of Surface-Induced Magnetism in Adsorbed 3He Films. II: Curie-Weiss Temperature (Reinvestigated), Curie Constant and Liquid-Layer Susceptibility [O] . S. Tasaki 1989

机译：吸附3HE薄膜表面诱导磁性理论。 II：Curie-Weiss温度（Reinvedigated），居里恒定和液层敏感性
8. Density of States in Heavily Doped Strongly Compensated Semiconductors with Correlated Impurity Distribution [R] . Yanchev, I. Y., Koinov, Z. G., Petkova, A. M. 1980

机译：具有相关杂质分布的重掺杂强补偿半导体中的态密度

Curie–Weiss behavior of the low-temperature paramagnetic susceptibility of semiconductors doped and compensated with hydrogen-like impurities

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