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Optical properties of InAs/InP surface layers formed during the arsenic stabilization process

机译：在砷稳定过程中形成的INAS / INP表面层的光学性质

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A. Tabata;
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1. Role of thin InP cap layer and anion exchange reaction on structural and optical properties of InAs quantum dots on InP (001) [J] . Y. Sakuma, M. Takeguchi, K. Takemoto, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2005,第4期

机译：InP薄盖层和阴离子交换反应对InP（001）上InAs量子点的结构和光学性质的作用
2. InAs/InP quantum dots stacking: Impact of spacer layer on optical properties [J] . Xiong Yiling, Zhang Xiupu Journal of Applied Physics . 2019,第9期

机译：InAs / InP量子点堆叠：间隔层对光学性能的影响
3. InAs/InP quantum dots stacking: Impact of spacer layer on optical properties [J] . Xiong Yiling, Zhang Xiupu Journal of Applied Physics . 2019,第9期

机译：INAS / INP量子点堆叠：间隔层对光学性质的影响
4. Effects of thin GaAs cap layer on optical properties of InAs/InGaAs/InP quantum dot [C] . Kwangmin Park, Heedon Hwang, Haksun Lee, . 2003

机译：GaAs薄覆盖层对InAs / InGaAs / InP量子点光学性能的影响
5. Characterization of Electrochemically Formed Coloured Passive Layers on Titanium and Zirconium: Optical, Surface and Corrosion Properties [D] . Holmberg, Rebecca Jane 2011

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6. Identifying and rationalizing the morphological structural and optical properties of ... formula ...-Ag2MoO4 microcrystals and the formation process of Ag nanoparticles on their surfaces: combining experimental data and first-principles calculations [O] . Maria T Fabbro, Carla Saliby, Larissa R Rios, 2015

机译：鉴定并合理化...-Ag2MoO4微晶的形态结构和光学性质以及在其表面上形成银纳米颗粒的过程：结合实验数据和第一性原理计算
7. Formation of linear InAs quantum dot arrays on InGaAsP/InP (100) by self-organized anisotropic strain engineering and their optical properties [O] . Sritirawisarn, N Nut, Otten, van, FWM Frank, Eijkemans, TJ Tom, 2007

机译：自组织各向异性应变工程在InGaAsP / InP（100）上形成线性InAs量子点阵列及其光学性质
8. Electrooptical Switching Properties of Uniform Layer Tilted Surface Stabilized Ferroelectric Liquid Crystal Devices [R] . Jiu-Zhi, X., Handschy, M. A., Clark, N. A. 1987

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Optical properties of InAs/InP surface layers formed during the arsenic stabilization process

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