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Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences

机译：单层石墨烯场效应晶体管中的热载流量降解和偏置 - 温度不稳定性：相似性和差异

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Yury Illarionov; Anderson Smith; Sam Vaziri; Mikael Ostling; Thomas Mueller; Max Lemme; Tibor Grasser;
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年度 2015
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1. Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences [J] . Illarionov Yury, Smith Anderson, Vaziri Sam, Electron Devices, IEEE Transactions on . 2015,第11期

机译：单层石墨烯场效应晶体管中的热载流子降解和偏置温度不稳定性：异同
2. Bias-temperature instability on the back gate of single-layer double-gated graphene field-effect transistors [J] . Illarionov Yury Yu., Waltl Michael, Smith Anderson D., Japanese journal of applied physics . 2016,第4s期

机译：单层双栅石墨烯场效应晶体管的背栅上的偏压温度不稳定性
3. Bias-temperature instability in single-layer graphene field-effect transistors [J] . Yu. Yu. Illarionov, A. D. Smith, S. Vaziri, Applied Physics Letters . 2014,第14期

机译：单层石墨烯场效应晶体管的偏压温度不稳定性
4. Bias-temperature instability in single-layer graphene field-effect transistors: A reliability challenge [C] . Illarionov Yu.Yu., Smith A.D., Vaziri S., IEEE Silicon Nanoelectronics Workshop . 2014

机译：单层石墨烯场效应晶体管的偏压温度不稳定性：可靠性挑战
5. Bio-functionalized Graphene Field-effect Transistors for the Detection of Nucleic Acids and Drug Targets [D] . Vishnubhotla, Ramya. 2018

机译：用于核酸和药物靶标检测的生物功能化石墨烯场效应晶体管
6. High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films [O] . M Waqas Iqbal, M Zahir Iqbal, M Farooq Khan, -1

机译：高迁移率和空气稳定的单层WS2场效应晶体管夹在化学气相沉积生长的六角形BN膜之间
7. Single-layer graphene doping through molecular interaction: field-effect transistor and atomic force microscopy investigations [O] . Dattatray J. Late 2015

机译：单层石墨烯掺杂通过分子相互作用：场效应晶体管和原子力显微镜调查
8. Correlation of hot-carrier stress and ionization induced degradation in bipolar transistors [R] . Pease, R. L., Kosier, S. L., Schrimpf, R. D., 1994

机译：双极晶体管中热载流子应力与电离诱导退化的相关性

Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences

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