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Determination of Ambipolar Lifetime and Epilayer Thickness of 5kV SiC Bipolar Devices by Transient Switching Studies

机译：瞬态切换研究确定5kV SiC双极装置的Ambolar寿命和脱落厚度

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Tarek Ben Salah; Samien Risaletto; Christophe Raynaud; Kamel Besbes; Dominique Bergogne; Dominique Planson; Hervé Morel;
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年度 2008
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1. HCI assisted growth of thick 4H-SiC epilayers for bipolar devices [J] . Birgit Kallinger, Christian Ehlers, Patrick Berwian, Materials science forum . 2014,第pta1期

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2. Influence of epilayer thickness and structural defects on the minority carrier lifetime in 4H-SiC [J] . Birgit Kallinger, Patrick Berwian, Jochen Friedrich, Materials science forum . 2013,第期

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3. Estimation of Surface Recombination Velocity from Thickness Dependence of Carrier Lifetime in n-Type 4H-SiC Epilayers [J] . Masashi Kato, Atsushi Yoshida, Masaya Ichimura Japanese journal of applied physics . 2012,第2Issue2期

机译：从n型4H-SiC外延层中载流子寿命的厚度依赖性估算表面复合速度
4. Determination of ambipolar lifetime and epilayer thickness of 5kV SiC bipolar devices by transient switching studies [C] . Tarek Ben Salah, Damien Risaletto, Christophe Raynaud, Silicon Carbide and Related Materials 2007 . 2009

机译：通过瞬态开关研究确定5kV SiC双极器件的双极寿命和表层厚度
5. Modeling and Loss Analysis of SiC Power Semiconductor Devices for Switching Converter Applications [D] . Eskandari, Soheila. 2019

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6. Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices [O] . Wei Wang, Ming Wang, Elia Ambrosi, -1

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7. A Comparison of the Microwave Photoconductivity Decay and Open-Circuit Voltage Decay Lifetime Measurement Techniques for Lifetime-Enhanced 4H-SiC Epilayers [O] . Edward Van Brunt, Anant Agarwal, Al Burk, 2013

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8. Exploratory Development of SiC Bipolar Transistors and GaN heterojunction Bipolar Transistors for High-Power Switching Applications. [R] . Cooper, J. A. 2003

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Determination of Ambipolar Lifetime and Epilayer Thickness of 5kV SiC Bipolar Devices by Transient Switching Studies

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