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Towards 11nm half-pitch resolution for a negative-tone chemically amplified molecular resist platform for extreme-ultraviolet lithography

机译：对于极端紫外线光刻的负色调化学放大的分子抗蚀剂平台朝向11nm半间距分辨率

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Andreas Frommhold; Alexandra McClelland; Dongxu Yang; Richard E. Palmer; John Roth; Yasin Ekinci; Mark C. Rosamund; Alex P. G. Robinson;
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年度 2015
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1. Negative-tone chemically-amplified resist development for high resolution hybrid lithography [J] . S. Landis, S. Pauliac, R. Hanawa, Microelectronic Engineering . 2004,第Jun期

机译：用于高分辨率混合光刻的负性化学放大抗蚀剂显影
2. Relationship between Resolution Blur and Shot Noise in Line Edge Roughness Formation of Chemically Amplified Resists Used for Extreme-Ultraviolet Lithography [J] . Kozawa Takahiro, Santillan Julius Joseph, Itani Toshiro Journal of Photopolymer Science and Technology . 2018,第2期

机译：用于极端紫外线型抗蚀剂的线边缘粗糙度中分辨率模糊和射击噪声的关系
3. Relationship between Resolution Blur and Shot Noise in Line Edge Roughness Formation of Chemically Amplified Resists Used for Extreme-Ultraviolet Lithography [J] . Takahiro Kozawa, Julius Joseph Santillan, Toshiro Itani Journal of Photopolymer Science and Technology . 2018,第2期

机译：极紫外光刻中使用的化学放大抗蚀剂的线条边缘粗糙度形成中分辨率模糊和散粒噪声之间的关系
4. Towards 11 nm half-pitch Resolution for a Negative-tone Chemically Amplified Molecular Resist Platform for EUV Lithography [C] . Andreas Frommhold, Alexandra McClelland, Dongxu Yang, Advances in Patterning Materials and Processes XXXII . 2015

机译：用于EUV光刻的负性化学放大分子抗蚀剂平台的半间距分辨率接近11 nm
5. Exploration of non-chemically amplified resists based on dissolution inhibitors for 193 nm lithography. [D] . Baylav, Burak. 2010

机译：探索基于溶出抑制剂的非化学放大抗蚀剂，用于193 nm光刻。
6. Fabricating a high-resolution mask with improved line-edge roughness by using a nonchemically amplified resist and a postexposure bake [O] . Hidetatsu Miyoshi, Jun Taniguchi -1

机译：通过使用非化学放大的抗蚀剂和曝光后烘烤来制造具有改善的线边缘粗糙度的高分辨率掩模
7. Towards 11 nm half-pitch Resolution for a Negative-tone Chemically Amplified Molecular Resist Platform for EUV Lithography [O] . Frommhold, A, McClelland, A, Yang, D, 2015

机译：用于EUV光刻的负色度化学放大分子抗蚀剂平台的11nm半间距分辨率

Towards 11nm half-pitch resolution for a negative-tone chemically amplified molecular resist platform for extreme-ultraviolet lithography

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