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Surface Versus Impurity-Doping Contributions in InAs Nanocrystal Field Effect Transistor Performance

机译：表面与杂质掺杂渠道纳米晶体场效应晶体管性能

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Durgesh C. Tripathi; Lior Asor; Gil Zaharoni; Uri Banin; Nir Tessler;
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1. Surface Versus Impurity-Doping Contributions in InAs Nanocrystal Field Effect Transistor Performance [J] . Tripathi Durgesh C., Asor Lior, Zaharoni Gil, The journal of physical chemistry, C. Nanomaterials and interfaces . 2019,第30期

机译：表面与杂质掺杂渠道纳米晶体场效应晶体管性能
2. Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors [J] . K.-M. Persson, B. G. Malm, L.-E. Wernersson Applied Physics Letters . 2013,第3期

机译：InAs纳米线金属氧化物半导体场效应晶体管中表面和核心对1 / f噪声的贡献
3. Terahertz radiation and second-harmonic generation from InAs: Bulk versus surface electric-field-induced contributions [J] . Matthew Reid, Igor V. Cravetchi, Robert Fedosejevs Physical review. B, Condensed Matter And Materials Physics . 2005,第3期

机译：InAs的太赫兹辐射和二次谐波产生：体电场对表面电场的贡献
4. Impact of electron effective mass variation on the performance of InAs/GaSb Electron-Hole Bilayer Tunneling Field-Effect Transistor [C] . J.L. Padilla, C. Medina-Bailón, M. Rupakula, Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon . 2018

机译：电子有效质量变化对InAs / GaSb电子孔双层隧穿场效应晶体管性能的影响
5. Dark Current Suppression, Optical Performance Improvement and High Frequency Operation of InAs/GaSb and InAs/InAsSb Type-II Superlattices-Based Infrared Devices [D] . Chevallier, Romain. 2019

机译：InAs / GaSb和基于InAs / InAsSb II型超晶格的红外器件的暗电流抑制，光学性能改进和高频操作
6. Numerical investigation of the effect of substrate surface roughness on the performance of zigzag graphene nanoribbon field effect transistors symmetrically doped with BN [O] . Majid Sanaeepur, Arash Yazdanpanah Goharrizi, Mohammad Javad Sharifi 2014

机译：衬底表面粗糙度对对称掺杂BN的曲折形石墨烯纳米带场效应晶体管性能影响的数值研究
7. Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors [O] . Persson, K. -M, Malm, B. Gunnar, Wernersson, L. -E 2013

机译：InAs纳米线金属氧化物半导体场效应晶体管中表面和核心对1 / f噪声的贡献

Surface Versus Impurity-Doping Contributions in InAs Nanocrystal Field Effect Transistor Performance

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