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Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

机译：高温退火（T> 1650°C）对P型植入4H-SIC层的形态学和电性能的影响

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M. Spera; D. Corso; S. Di Franco; G. Greco; A. Severino; P. Fiorenza; F. Giannazzo; F. Roccaforte;
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1. Effect of high temperature annealing (T 1650 degrees C) on the morphological and electrical properties of p-type implanted 4H-SiC layers [J] . Spera M., Corso D., Di Franco S., Materials science in semiconductor processing . 2019,第期

机译：高温退火（T＆GT; 1650 c）对P型植入4H-SIC层的形态学和电性能的影响
2. Effects of different post-implantation annealing conditions on the electrical properties of interfaces to p-type implanted 4H-SiC [J] . A. Frazzetto, F. Roccaforte, F. Giannazzo, Materials science forum . 2012,第PTa2期

机译：不同的注入后退火条件对p型注入4H-SiC界面电性能的影响
3. Evolution of the electrical and structural properties of Ti/Al/W contacts to p-type implanted 4H-SiC upon thermal annealing [J] . M. Vivona, G. Greco, R. Lo Nigro, Materials science forum . 2015,第期

机译：热退火后Ti / Al / W接触点对p型注入4H-SiC的电和结构性能的演变
4. Effect of surface orientation and off-angle on surface roughness and electrical properties of p-type impurity implanted 4H-SiC substrate after high temperature annealing [C] . Akimasa Kinoshita, Makoto Katou, Miwa Kawasaki, International Conference on Silicon Carbide and Related Materials . 2006

机译：表面取向与偏角对高温退火后P型杂质注入的4H-SiC基板表面粗糙度和电性能的影响
5. The characterization of defects, impurities, and carriers in gallium arsenide crystal growth and their effects on the electrical properties, thermal stability, and implant anneal characteristics. [D] . Liao, De-Dui. 1990

机译：砷化镓晶体生长中缺陷，杂质和载体的特征及其对电性能，热稳定性和注入退火特性的影响。
6. Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings [O] . Monia Spera, Giuseppe Greco, Domenico Corso, 2019

机译：在不同的注入后退火后p型铝注入的4H-SiC层上的欧姆接触
7. Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings [O] . Monia Spera, Giuseppe Greco, Domenico Corso, 2019

机译：P型Al植入的4H-SIC层上的欧姆接触后的植入后退火

Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

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