In this work, all ink-jet printed (IJP) low-voltage organic field-effect transistors (OFETs) on flexible substrate are reported. The OFETs use IJP silver (Ag) for source/drain/gate electrodes, poly(4-vinylphenol) (PVP) for gate dielectric, 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) blended with polystyrene (PS) as the semiconducting layer and CYTOP for encapsulation layer. All the printing processes were carried out in ambient air environment using a single laboratory ink-jet printer Dimatix DMP-2831. The all IJP device presents state-of-the-art performance with low operation voltage down to 3 V, small subthreshold swing (SS) of 0.155 V/decade, mobility of 0.26 cm$^2$ V$^{−1}$s$^{−1}$, threshold voltage (V$_{th}$) of −0.17 V and on/off ratio of 3.1 × 10$^5$, along with a yield of 62.5%. Through interface engineering and proper process optimization, this work demonstrates a promising low-voltage all IJP device platform for low-cost flexible printed electronics.
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机译：在这项工作中，报告可挠性基板上的所有喷墨印刷（IJP）低压有机场效应晶体管（OFET）。该OFET的用于源极/漏极/栅极电极，聚（4-乙烯基苯酚）（PVP），用于栅极电介质，6,13-双（三异丙）并五苯（TIPS-并五苯）与聚苯乙烯共混IJP银（Ag）（PS）作为封装层的半导体层和CYTOP。所有的印刷方法中使用单一的实验室喷墨打印机Dimatix的DMP-2831在周围空气环境中进行。所有IJP装置呈现状态的最先进的性能与低操作电压降低至3伏，小亚阈值摆幅0.155 V /十年（SS），的0.26厘米$ ^ 2 $ V $ ^迁移率{ - 1} $ S $ ^ { - 1} $，阈值电压-0.17的V（V $ _ {第} $）和开/关的3.1×10 $ ^ 5 $比，62.5％的产率沿。通过界面工程和适当的工艺优化，这项工作展示了一个有前途的低电压低成本柔性印刷电子IJP所有设备平台。
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