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Coupling of bias-induced crystallographic shear planes with charged domain walls in ferroelectric oxide thin films

机译：偏置晶体剪切平面在铁电氧化物薄膜中具有带电畴壁的耦合

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Myung-Geun Han; Joseph A. Garlow; Matthieu Bugnet; Simon Divilov; Matthew S. J. Marshall; Lijun Wu; Matthew Dawber; Marivi Fernandez-Serra; Gianluigi A. Botton; Sang-Wook Cheong; Frederick J. Walker; Charles H. Ahn; Yimei Zhu;
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1. Coupling of bias-induced crystallographic shear planes with charged domain walls in ferroelectric oxide thin films [J] . Myung-Geun Han, Joseph A. Garlow, Matthieu Bugnet, Physical review . 2016,第10期

机译：铁电氧化物薄膜中偏压诱导的晶体剪切平面与带电畴壁的耦合
2. Coupling of bias-induced crystallographic shear planes with charged domain walls in ferroelectric oxide thin films [J] . Han Myung-Geun, Garlow Joseph A., Bugnet Matthieu, Physical review, B . 2016,第10期

机译：铁电氧化物薄膜中偏压诱导的晶体剪切平面与带电畴壁的耦合
3. Spatial Coupling of Ferroelectric Domain Walls and Crystallographic Defects in the PbTiO_3 Films [J] . Ying Liu, Yun-Long Tang, Yin-Lian Zhu, Advanced materials interfaces . 2016,第15期

机译：PbTiO_3薄膜中铁电畴壁的空间耦合和晶体学缺陷
4. Coupling of Defect Fields to Domains and Phase Transition Characteristics of Ferroelectric Thin Films with Charged Defects [C] . Ibrahim B. Misirlioglu, Hale N. Cologlu, Mehmet Yildiz Oxide nanoelectronics . 2010

机译：缺陷场与带电缺陷铁电薄膜的畴耦合和相变特性
5. Nanoscale behavior of ferroelectric domains in perovskite thin films. [D] . Shafer, Padraic Corey. 2009

机译：钙钛矿薄膜中铁电畴的纳米行为。
6. Controlled creation and displacement of charged domain walls in ferroelectric thin films [O] . L. Feigl, T. Sluka, L. J. McGilly, -1

机译：铁电薄膜中带电畴壁的受控生成和置换
7. Ferroelectric Domain Wall Motion in Freestanding Single‐Crystal Complex Oxide Thin Film [O] . Saidur R. Bakaul, Jaegyu Kim, Seungbum Hong, 2019

机译：铁电畴壁运动在独立式单晶复合氧化物薄膜

Coupling of bias-induced crystallographic shear planes with charged domain walls in ferroelectric oxide thin films

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