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Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant

机译：通过用基于H3PO4的蚀刻剂修饰微米尺寸的图案蓝宝石衬底来抑制侧壁GaN的初始生长

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Wen-Yang Hsu; Yuan-Chi Lian; Pei-Yu Wu; Wei-Min Yong; Jinn-Kong Sheu; Kun-Lin Lin; YewChung Wu;
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1. Growth Mechanism of Nonpolar and Semipolar GaN Layers from Sapphire Sidewalls on Various Maskless Patterned Sapphire Substrates [J] . Narihito Okada, Hiroyasu Oshita, Akihiro Kurisu, Japanese journal of applied physics . 2011,第3ISSUE1期

机译：各种无掩模图案化蓝宝石衬底上蓝宝石侧壁的非极性和半极性GaN层的生长机理
2. A study of GaN nucleation and coalescence in the initial growth stages on nanoscale patterned sapphire substrates via MOCVD [J] . Chen Yifan, Chen Zhizhong, Li Junze, CrystEngComm . 2018,第42期

机译：通过MOCVD在纳米级图案蓝宝石基材上初始生长阶段GaN成核和聚结的研究
3. Effect of initial growth on the quality of GaN on patterned sapphire substrate with ex situ physical vapor deposition AlN seed layer [J] . Wang Hongbo, Daigo Yoshiaki, Seino Takuya, Japanese journal of applied physics . 2016,第10期

机译：初始生长对具有异位物理气相沉积AlN种子层的图案化蓝宝石衬底上GaN质量的影响
4. Growth of GaN on patterned GaN/sapphire substrates with various metallic masks by high pressure solution method [C] . M. Bockowski I. Grzegory, G. Nowak, G. Kamler, . 2006

机译：高压溶液法在带有各种金属掩模的GaN /蓝宝石衬底上生长GaN
5. Heteroepitaxial Growth of Gallium Nitride on Patterned Sapphire Substrate with Serpentine Channels. [D] . Liu, Pei-Chi. 2011

机译：氮化镓在具有蛇形通道的图案化蓝宝石衬底上异质外延生长。
6. Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant [O] . Wen-Yang Hsu, Yuan-Chi Lian, Pei-Yu Wu, 2018

机译：通过基于H3PO4的蚀刻剂修饰微米尺寸的图案化蓝宝石衬底抑制侧壁GaN的初始生长
7. Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy [O] . B. Beaumont, M. Vaille, G. Nataf, 1998

机译：通过选择性金属有机气相外延，Mg-Enviant of Patched GaN / Sapphire底物上的GaN的横向过度生长

Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant

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