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NVMe-over-fabrics performance characterization and the path to low-overhead flash disaggregation

机译：NVME过度织物性能表征和低开销闪光分解的路径

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Zvika Guz; Harry (Huan) Li; Anahita Shayesteh; Vijay Balakrishnan;
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1. Performance characterization of NVMe-over-fabrics storage disaggregation [J] . Dominik Strzalka Computing reviews . 2020,第7期

机译：NVME过度储存分解的性能表征
2. Performance Characterization of NVMe-over-Fabrics Storage Disaggregation [J] . Guz Zvika, Li Harry (Huan), Shayesteh Anahita, ACM Transactions on Storage . 2018,第4期

机译：NVME过度储存分解的性能表征
3. The Path To High-Performance NAND Flash [J] . William Wong Electronic Design . 2013,第3期

机译：高性能NAND闪存的途径
4. Characterization and improvements of flash EEPROM endurance performance by integrating optimized process modules in advanced flash technology [C] . Shone, F., Chang, . 1995

机译：通过将优化的处理模块集成到先进的闪存技术中来表征和提高闪存EEPROM的耐久性
5. Performance analysis and network path characterization for scalable Internet streaming. [D] . Kang, Seong-Ryong. 2008

机译：性能分析和网络路径表征，可扩展的Internet流。
6. Performance-Related Characterization of Forming-Induced Initial Damage in 16MnCrS5 Steel under a Torsional Forward-Reverse Loading Path at LCF Regime [O] . Kerstin Moehring, Frank Walther 2020

机译：在LCF条件下扭转正反转载荷路径下16MnCrS5钢中成形诱导的初始损伤的性能相关表征
7. The VUV and soft x-ray free electron laser FLASH (former VUV-FEL) is a user facility at DESY\ud (Hamburg). In order to optimize the performance of the facility, an accurate characterization of the\ud electron beam properties is essential. The transverse projected emittance, one of the important parameters\ud characterizing the quality of an electron beam, is measured using a four monitor method with optical\ud transition radiation monitors. A normalized rms emittance below 2 mmmrad for a 1 nC beam has been\ud measured. In this paper we describe the experimental setup, data analysis methods, and present\ud experimental results. [O] . Loehl, F, Schreiber, S, Castellano, M, 2006

机译：VUV和软X射线自由电子激光器FLASH（以前的VUV-FEL）是DESY \ ud的用户设施（汉堡）。为了优化设施的性能，\ ud的准确表征电子束特性至关重要。横向投影发射率，重要参数之一表征电子束质量的方法是使用具有光学\ ud 过渡辐射监测仪。 1 udC光束的归一化均方根发射率低于2 mmmrad 测量。在本文中，我们描述了实验设置，数据分析方法以及当前\ ud 实验结果。

NVMe-over-fabrics performance characterization and the path to low-overhead flash disaggregation

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