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Enhancing dielectric permittivity for energy-storage devices through tricritical phenomenon

机译：通过三分批判现象提高能量储存装置的介电介电常数

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Jinghui Gao; Yan Wang; Yongbin Liu; Xinghao Hu; Xiaoqin Ke; Lisheng Zhong; Yuting He; Xiaobing Ren;
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年度 2017
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1. Enhancing dielectric permittivity for energy-storage devices through tricritical phenomenon [J] . Jinghui Gao, Yan Wang, Yongbin Liu, Scientific reports. . 2017,第1期

机译：通过三分批判现象提高能量储存装置的介电介电常数
2. Growth and impedance analysis of pure TGAc and dye doped TGAc crystals-enhanced dielectric permittivity for energy-storage devices [J] . P. R. Deepthi, Anu Sukhdev, P. Mohan Kumar, SN Applied Sciences . 2020,第9期

机译：纯TGAC和染料掺杂TGAC晶体的生长和阻抗分析 - 增强能量储存装置的介电常数
3. Laminated Modulation of Tricritical Ferroelectrics Exhibiting Highly Enhanced Dielectric Permittivity and Temperature Stability [J] . Gao Jinghui, Wang Yan, He Zhixin, Advanced Functional Materials . 2019,第17期

机译：具有高介电常数和温度稳定性的三临界铁电体的叠层调制
4. Anomalous high permittivity in salty ice-a new dielectric phenomenon [C] . Zhong, L., Xu, . 1988

机译：咸冰中的异常高介电常数-一种新的介电现象
5. High-permittivity dielectrics and high mobility semiconductors for future scaled technology: Hafnium-based high-K gate dielectrics and interface engineering for hafnium oxide/germanium CMOS device [D] . Lu, Nan 2006

机译：适用于未来规模化技术的高介电常数电介质和高迁移率半导体：氧化ha /锗CMOS器件的Ha基高K栅极电介质和界面工程
6. Enhancing dielectric permittivity for energy-storage devices through tricritical phenomenon [O] . Jinghui Gao, Yan Wang, Yongbin Liu, -1

机译：通过三临界现象提高储能器件的介电常数
7. Growth and impedance analysis of pure TGAc and dye doped TGAc crystals-enhanced dielectric permittivity for energy-storage devices [O] . P. R. Deepthi, Anu Sukhdev, P. Mohan Kumar, 2020

机译：纯TGAC和染料掺杂TGAC晶体的生长和阻抗分析 - 增强能量储存装置的介电常数
8. Energy-Storage Systems for Automobile Propulsion. Volume 2. Energy-Storage Devices. Final Report [R] . O'Connell, L. G., Anderson, C. J., Behrin, E. 1980

机译：汽车推进能量存储系统。第2卷。储能装置。总结报告

Enhancing dielectric permittivity for energy-storage devices through tricritical phenomenon

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