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Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic Device

机译：亚钽氧化物神经晶体装置的可顺应性，数字集和模拟复位突触特性

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Yawar Abbas; Yu-Rim Jeon; Andrey Sergeevich Sokolov; Sohyeon Kim; Boncheol Ku; Changhwan Choi;
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年度 2018
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1. Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic Device [J] . Yawar Abbas, Yu-Rim Jeon, Andrey Sergeevich Sokolov, Scientific reports. . 2018,第1期

机译：基于亚氧化钽的神经形态装置的无遵从性，数字SET和模拟RESET突触特性
2. Controllable analog resistive switching and synaptic characteristics in ZrO_2/ ZTO bilayer memristive device for neuromorphic systems [J] . Ismail Muhammad, Abbas Haider, Choi Changhwan, Applied Surface Science . 2020,第Nova1期

机译：ZrO_2 / ZTO双层椎间膜膜装置中可控模拟电阻切换和突触特性进行神经形式系统
3. Cu-ion-actuated three-terminal neuromorphic synaptic devices based on binary metal-oxide electrolyte and channel [J] . Heebum Kang, Jiyong Woo Applied Physics Letters . 2021,第7期

机译：基于二元金属氧化物电解质和通道的Cu离子致动三末末端神经突触装置
4. Physical modelling of the SET/RESET characteristics and analog properties of TiOx/HfO2−x/TiOx-based RRAM devices [C] . P. Bousoulas, P. Asenov, D. Tsoukalas International Conference on Simulation of Semiconductor Processes and Devices . 2016

机译：基于TiOx / HfO2-x / TiOx的RRAM器件的SET / RESET特性和模拟特性的物理建模
5. Design of Resistive Synaptic Devices and Array Architectures for Neuromorphic Computing [D] . Chen, Pai-Yu. 2018

机译：用于神经形态计算的电阻性突触设备和阵列架构的设计
6. Compliance-Free Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic Device [O] . Yawar Abbas, Yu-Rim Jeon, Andrey Sergeevich Sokolov, -1

机译：基于亚氧化钽的神经形态装置的无遵从性数字SET和模拟RESET突触特性
7. Neuromorphic Computing: Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching (Adv. Electron. Mater. 11/2020) [O] . Stefan Petzold, Eszter Piros, Robert Eilhardt, 2020

机译：神经形态计算：氧气工程定制基于氧化钇的RRAM器件中的开关动力学：从数字到模拟交换的多级量化（ADV。电子。Matter。11/2020）

Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic Device

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